公开(公告)号：US20240032280A1

公开(公告)日：2024-01-25

申请号：US18224802

申请日：2023-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taejin PARK ,  Kyujin KIM ,  Bongsoo KIM ,  Huijung KIM ,  Chulkwon PARK ,  Gyunghyun YOON ,  Heejae CHAE

IPC: H10B12/00

CPC classification number: H10B12/34 ,  H10B12/053

Abstract: An Integrated Circuit (IC) semiconductor device includes: field insulating layers buried in field trenches disposed apart from each other inside a substrate; active regions defined by the field insulating layers; and active fins disposed on the active regions and protruding from surfaces of the field insulating layers. The field insulating layers include a first subfield insulating layer and a second subfield insulating layer, and a surface of the first subfield insulating layer is disposed at a level lower than a level of a surface of the second subfield insulating layer.