公开(公告)号：US20160359087A1

公开(公告)日：2016-12-08

申请号：US15158059

申请日：2016-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gong Shin LEE ,  In Joon YEO ,  Sung Won KO ,  Shi Young LEE ,  Byung Chul CHOI

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  G02F1/133 ,  F21V29/70 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1368 ,  F21V8/00 ,  F21K99/00 ,  H01L33/06 ,  G02F1/1333

CPC classification number: G02B6/0068 ,  F21K9/233 ,  F21K9/238 ,  F21K9/27 ,  F21K9/278 ,  F21S8/02 ,  F21V23/005 ,  F21V23/006 ,  F21V23/02 ,  F21V29/773 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  G02B6/0055 ,  G02B6/0073 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: Provided is a semiconductor light emitting device including: a light emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode structure penetrating through the second semiconductor layer and the active layer to be connected to the first semiconductor layer, the first electrode structure having at least one contact region; and a second electrode structure connected to the second semiconductor layer, wherein the first semiconductor layer includes a protrusion portion provided on the at least one contact region and a recess portion provided in a circumferential portion of the protrusion portion.

Abstract translation: 提供一种半导体发光器件，包括：发光堆叠，包括第一半导体层，有源层和第二半导体层; 穿过所述第二半导体层的第一电极结构和要连接到所述第一半导体层的有源层，所述第一电极结构具有至少一个接触区域; 以及连接到第二半导体层的第二电极结构，其中第一半导体层包括设置在至少一个接触区域上的突出部分和设置在突出部分的圆周部分中的凹部。