公开(公告)号：US20250120095A1

公开(公告)日：2025-04-10

申请号：US18802058

申请日：2024-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Lee ,  Geonhui Han ,  Hyunsang Hwang ,  Dongho Ahn ,  Jinmyung Choi

IPC: H10B63/00

Abstract: A semiconductor device includes a substrate, source/drain regions on the substrate, a channel layer between the source/drain regions and including indium gallium zinc oxide (IGZO), a variable resistance layer on the channel layer and including metal oxide that satisfies a stoichiometric ratio of metal to oxygen, a gate insulating layer on the variable resistance layer and including metal oxide that does not satisfy the stoichiometric ratio of metal to oxygen, and a gate electrode on the gate insulating layer.