公开(公告)号：US11437088B2

公开(公告)日：2022-09-06

申请号：US17239655

申请日：2021-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjae Kim ,  Jincheol Kim ,  Ahreum Kim ,  Homoon Shin ,  Dooho Cho ,  Yongsung Cho

IPC: G11C11/408 ,  G11C11/4074 ,  G11C11/4093 ,  G11C5/06

Abstract: A nonvolatile memory includes; a memory cell array including memory cells commonly connected to a first signal line, a first row decoder including a first pass transistor configured to provide a driving voltage to one end of the first signal line, and a second row decoder including a second pass transistor configured to provide the driving voltage to an opposing end of the first signal line. An ON-resistance of the first pass transistor is different from an ON-resistance of the second pass transistor. A first wiring line having a first resistance connects the first pass transistor and the one end of the first signal line and a second wiring line having a second resistance different from the first resistance connects the second pass transistor and the opposing end of the first signal line.