公开(公告)号：US20230239595A1

公开(公告)日：2023-07-27

申请号：US18149273

申请日：2023-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Takahiko INADA ,  Dongwook Won ,  Hyunjin Jeon ,  Jaeheum Baek

IPC: H04N25/78 ,  H04N25/76 ,  H04N25/77

CPC classification number: H04N25/78 ,  H04N25/7795 ,  H04N25/77

Abstract: An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a same column line, the first pixel including 2N sub-pixels sharing a first floating diffusion node and the second pixel including 2N sub-pixels sharing a second floating diffusion node, wherein N is a positive integer greater than or equal to two, a timing generator configured to change a reset order and a readout order of 4N sub-pixels included in the first pixel and the second pixel, according to an exposure time setting value, and output a row address according to the changed orders, and a row driver configured to drive the pixel array based on the row address.

公开(公告)号：US12224295B2

公开(公告)日：2025-02-11

申请号：US17455246

申请日：2021-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hakyu Choi ,  Yongsuk Choi ,  Keo-Sung Park ,  Dongwook Won

IPC: H01L27/146

Abstract: A method of manufacturing an image sensor includes forming a first dopant region having a second conductivity type in a semiconductor substrate including first and second surfaces. The semiconductor substrate has a first conductivity type different from the second conductivity type. The method further includes forming a pixel isolation structure defining pixel regions in the semiconductor substrate, forming a vertical trench by patterning the first surface in each of the pixel regions, forming a mask pattern exposing each of the pixel regions on the first surface, in which the mask pattern includes a residual mask pattern filling at least a portion of the vertical trench, forming a second dopant region having the second conductivity type in the semiconductor substrate by using the mask pattern as an ion-implantation mask, in which the second dopant region is adjacent to the vertical trench, and forming a transfer gate electrode in the vertical trench.

公开(公告)号：US12200386B2

公开(公告)日：2025-01-14

申请号：US18149273

申请日：2023-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Takahiko Inada ,  Dongwook Won ,  Hyunjin Jeon ,  Jaeheum Baek

IPC: H04N25/78 ,  H04N25/76 ,  H04N25/77

Abstract: An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a same column line, the first pixel including 2N sub-pixels sharing a first floating diffusion node and the second pixel including 2N sub-pixels sharing a second floating diffusion node, wherein N is a positive integer greater than or equal to two, a timing generator configured to change a reset order and a readout order of 4N sub-pixels included in the first pixel and the second pixel, according to an exposure time setting value, and output a row address according to the changed orders, and a row driver configured to drive the pixel array based on the row address.