公开(公告)号：US20200303508A1

公开(公告)日：2020-09-24

申请号：US16662258

申请日：2019-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYUNGEUN YUN ,  Jun-Gu Kang ,  Dong-IL Park ,  Yongsang Jeong

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/423 ,  H01L23/535

Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first gate stack on the first region of the substrate; a first source/drain contact at a first side of the first gate stack, wherein the first source/drain contact is connected to the substrate; a second gate stack on the second region of the substrate; and a second source/drain contact at a first side of the second gate stack, wherein the second source/drain contact is connected to the substrate, wherein a height of the second source/drain contact is greater than a height of the first source/drain contact, and wherein a width of the second source/drain contact is greater than a width of the first source/drain contact.

公开(公告)号：US20210384304A1

公开(公告)日：2021-12-09

申请号：US17406257

申请日：2021-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungeun Yun ,  Jun-Gu Kang ,  Dong-IL Park ,  Yongsang Jeong

IPC: H01L29/417 ,  H01L23/535 ,  H01L29/423 ,  H01L27/088 ,  H01L27/12 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first gate stack on the first region of the substrate; a first source/drain contact at a first side of the first gate stack, wherein the first source/drain contact is connected to the substrate; a second gate stack on the second region of the substrate; and a second source/drain contact at a first side of the second gate stack, wherein the second source/drain contact is connected to the substrate, wherein a height of the second source/drain contact is greater than a height of the first source/drain contact, and wherein a width of the second source/drain contact is greater than a width of the first source/drain contact.