公开(公告)号：US20240105789A1

公开(公告)日：2024-03-28

申请号：US18319014

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONHYUK LEE ,  SANGDUK PARK ,  DONGSOO SEO ,  JINWOOK LEE

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/775

CPC classification number: H01L29/41775 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/456 ,  H01L29/775

Abstract: Embodiments of the present inventive concepts provide a semiconductor device including a substrate that includes an active pattern, a channel pattern disposed on the active pattern, a first source/drain pattern and a second source/drain pattern that are connected to the plurality of semiconductor patterns, a gate electrode disposed on the plurality of semiconductor patterns, and a first active contact electrically connected to the first source/drain pattern and a second active contact electrically connected to the second source/drain pattern. In one aspect, the channel pattern includes a plurality of semiconductor patterns that are spaced apart from and vertically stacked on each other. In one aspect, the gate electrode includes inner electrodes disposed between neighboring semiconductor patterns of the plurality of semiconductor patterns and an outer electrode disposed on an uppermost semiconductor pattern.