公开(公告)号：US20250157524A1

公开(公告)日：2025-05-15

申请号：US18754855

申请日：2024-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyoung LEE ,  CHULKWON PARK ,  DONGHAK SHIN

IPC: G11C11/408 ,  G11C11/4091 ,  H01L25/065 ,  H10B12/00 ,  H10B80/00

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes: a first chip including a cell area and a remaining area, the cell area including a plurality of memory cells; and a second chip including a core area corresponding to the cell area and a peripheral area corresponding to the remaining area, the first chip and the second chip overlap along a vertical direction. Core circuits are provided in the core area of the second chip and peripheral circuits are provided in the peripheral area of the second chip. The core circuits and the peripheral circuits are configured to control operation of the plurality of memory cells, and passive elements connected to the peripheral circuits of the second chip are provided in the remaining area of the first chip.