公开(公告)号：US20240407171A1

公开(公告)日：2024-12-05

申请号：US18672106

申请日：2024-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： PYEONGWOO KIM ,  Changsup LEE ,  Seungwoo PAEK ,  Yunsun JANG

IPC: H10B43/40 ,  G11C16/04 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

Abstract: A semiconductor device including a peripheral circuit structure; and a cell structure stacked on the peripheral circuit structure and including a cell region, a connection region, and a peripheral circuit connection region, wherein the cell structure includes gate electrodes spaced apart from one another in a vertical direction in the cell region; a channel structure extending in the vertical direction through the gate electrodes, in the cell region, and including a first end and a second end opposite to the first end, the first end being proximate to the peripheral circuit structure; an insulating wall extending in the vertical direction at a boundary between the cell region and the connection region; and a common source layer connected to the second end of the channel structure in the cell region and having a portion arranged on a sidewall of the insulating wall.