公开(公告)号：US20210364420A1

公开(公告)日：2021-11-25

申请号：US17081568

申请日：2020-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehwang JUNG ,  Wookrae KIM ,  Myoungki AHN ,  Changhyeong YOON

IPC: G01N21/21

Abstract: A measurement system is disclosed. A measurement system includes an illumination module, a mirror module, a stage, and a detector. The illumination module includes a light source, an optical fiber, a collimating mirror, a polarization state generator, a beam control mirror, and a relay mirror. The mirror module includes a first beam splitter and a reflective objective mirror. The beam control mirror is movable to relay light received from the polarization state generator to various positions on the relay mirror.

公开(公告)号：US20220005715A1

公开(公告)日：2022-01-06

申请号：US17174731

申请日：2021-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myungjun LEE ,  Changhyeong YOON ,  Wookrae KIM ,  Jaehwang JUNG ,  Jinseob KIM

IPC: H01L21/67 ,  G01N21/47 ,  G01N21/88 ,  G01N21/95

Abstract: Provided are a diffraction-based metrology apparatus having high measurement sensitivity, a diffraction-based metrology method capable of accurately performing measurement on a semiconductor device, and a method of manufacturing a semiconductor device using the metrology method. The diffraction-based metrology apparatus includes a light source that outputs a light beam, a stage on which an object is placed, a reflective optical element that irradiates the light beam onto the object through reflection, such that the light beam is incident on the object at an inclination angle, the inclination angle being an acute angle, a detector that detects a diffracted light beam that is based on the light beam reflected and diffracted by the object and a processor that measures a 3D pupil matrix for the diffracted light beam and analyze the object based on the 3D pupil matrix.

公开(公告)号：US20230114817A1

公开(公告)日：2023-04-13

申请号：US17857291

申请日：2022-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inho SHIN ,  Wookrae KIM ,  Changhyeong YOON ,  Myungjun LEE ,  Heonju SHIN ,  Sangil IM ,  Sungho JANG

IPC: G06T7/62 ,  G06T7/00

Abstract: A semiconductor measurement apparatus includes an illumination unit including a light source, and a polarizer disposed on a propagation path of light emitted from the light source; an optical unit configured to direct the light passing through the polarizer to be incident onto a sample, and to transmit the light, reflected from the sample, to an image sensor; and a controller configured to process an original image, output by the image sensor, to determine a critical dimension of a structure included in a region of the sample on which the light is incident. The controller acquires a two-dimensional image. The controller orthogonally decomposes the two-dimensional image corresponding to a selected wavelength into a plurality of bases, generates one-dimensional data including a plurality of weights corresponding to the plurality of bases, and uses the one-dimensional data to determine a selected critical dimension among critical dimensions of the structure.