公开(公告)号：US09905568B2

公开(公告)日：2018-02-27

申请号：US15251580

申请日：2016-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Hoon Son ,  Jong-Won Kim ,  Chang-Seok Kang ,  Young-Woo Park ,  Jae-Duk Lee ,  Kyung-Hyun Kim ,  Byeong-Ju Kim ,  Phil-Ouk Nam ,  Kwang-Chul Park ,  Yeon-Sil Sohn ,  Jin-I Lee ,  Won-Bong Jung

IPC: H01L27/115 ,  H01L29/66 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11582

CPC classification number: H01L27/1157 ,  H01L27/11565 ,  H01L27/11582 ,  H01L29/66833

Abstract: A nonvolatile memory device includes a conductive line disposed on a substrate and vertically extended from the substrate, a first channel layer disposed on the substrate and vertically extended from the substrate, wherein the first channel layer is spaced apart from the conductive line, a second channel layer vertically extended from the substrate, wherein the second channel layer is disposed between the first channel layer and the conductive line, a first gate electrode disposed between the conductive line and the second channel layer, wherein the first gate electrode includes a first portion having a first thickness and a second portion having a second thickness that is different from the first thickness, and a second gate electrode disposed between the first channel layer and the second channel layer, wherein the second gate electrode has the second thickness.