-
公开(公告)号：US20240136356A1
公开(公告)日：2024-04-25
申请号：US18379731
申请日：2023-10-12
发明人： Byeol Hae EOM , Byung Ha CHOI , Keun Hwi CHO , Sung Won KIM , Yuri MASUOKA , Won Cheol JEONG
IPC分类号： H01L27/092 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/775
CPC分类号： H01L27/092 , H01L29/0673 , H01L29/41733 , H01L29/42392 , H01L29/775
摘要： A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.
-
公开(公告)号：US20240234417A9
公开(公告)日：2024-07-11
申请号：US18379731
申请日：2023-10-13
发明人： Byeol Hae EOM , Byung Ha CHOI , Keun Hwi CHO , Sung Won KIM , Yuri MASUOKA , Won Cheol JEONG
IPC分类号： H01L27/092 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/775
CPC分类号： H01L27/092 , H01L29/0673 , H01L29/41733 , H01L29/42392 , H01L29/775
摘要： A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.
-
搜索结果
2 条记录 (耗时 0.015 秒)
