公开(公告)号：US10649692B2

公开(公告)日：2020-05-12

申请号：US15390865

申请日：2016-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Chul Park ,  Jun-Ho Ahn ,  Bong-Gwan Seol

IPC: G06F11/14 ,  G06F3/06

Abstract: A method of operating a storage device includes receiving a write task from a host device. The method also includes storing the write task in a task queue included in the storage device. A write execution command is received from the host device. The method includes executing the write task in response to the write execution command and performing an internal management operation of the storage device after the write task is stored in the task queue and before the write execution command is received. The response time of the storage device to the write execution command is reduced and performance of the system is enhanced by performing the internal management operation such as the data backup operation during the queuing stage and the ready stage in advance before receiving the write execution command.

公开(公告)号：US09368223B2

公开(公告)日：2016-06-14

申请号：US14754884

申请日：2015-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Hwan-Chung Kim ,  Kyoungkuy Park ,  Eunju Park ,  Bong-Gwan Seol

IPC: G06F11/07 ,  G11C16/26 ,  G06F12/02 ,  G06F11/10 ,  G11C11/56 ,  G11C16/10 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G06F11/1072 ,  G06F12/0246 ,  G06F12/0253 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.

公开(公告)号：US09672104B2

公开(公告)日：2017-06-06

申请号：US15156912

申请日：2016-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Hwan-Chung Kim ,  Kyoungkuy Park ,  Eunju Park ,  Bong-Gwan Seol

IPC: G06F11/10 ,  G06F12/02 ,  G11C11/56 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G06F11/1072 ,  G06F12/0246 ,  G06F12/0253 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26 ,  G11C29/52

Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.