Capacitor
    2.
    发明授权

    公开(公告)号:US10199166B2

    公开(公告)日:2019-02-05

    申请号:US15806112

    申请日:2017-11-07

    Abstract: A capacitor includes: a substrate including a plurality of trenches and a capacitance formation portion, and a margin portion disposed around the capacitance formation portion; dielectric layers disposed on one surface of the substrate and filling the trenches; a plurality of first electrode layers each disposed on one surface of the dielectric layer and each including a first lead portion led out from the capacitance formation portion to the margin portion; and a plurality of second electrode layers each disposed on one surface of the dielectric layer to face the first electrode layer with each of the dielectric layers interposed therebetween, and each including a second lead portion led out from the capacitance formation portion to the margin portion, wherein the first and second lead portions of the plurality of first and second electrode layers are stacked in a stepped shape inclined in a direction from the margin portion to the capacitance formation portion.

    MULTILAYER ELECTRONIC COMPONENT
    8.
    发明申请

    公开(公告)号:US20220165500A1

    公开(公告)日:2022-05-26

    申请号:US17462726

    申请日:2021-08-31

    Abstract: A multilayer electronic component includes: a body including dielectric layers and internal electrodes disposed alternately with the dielectric layers; and external electrodes disposed on the body, wherein each of the external electrodes includes: an electrode layer connected to the internal electrodes; a first intermetallic compound layer disposed on the electrode layer and including Cu3Sn; a second intermetallic compound layer disposed on the first intermetallic compound layer and including Cu6Sn5; and a conductive resin layer disposed on the second intermetallic compound layer and including a conductive connection portion including a low melting point metal, a plurality of metal particles, and a base resin, and an average thickness of the first intermetallic compound layer is 0.5 to 2.5 μm.

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