公开(公告)号：US09893087B2

公开(公告)日：2018-02-13

申请号：US14955517

申请日：2015-12-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sangmok Hong ,  Moosoon Ko

IPC: H01L27/14 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3223 ,  H01L27/3276 ,  H01L2227/323

Abstract: A thin film transistor TFT substrate includes a substrate, a first conductive pattern that extends on the substrate in a first direction, a second conductive pattern located on the same layer as the first conductive pattern and nearest to a first side of the first conductive pattern in a second direction that is perpendicular to the first direction, and a dummy pattern located on the same layer as the first conductive pattern and located adjacent a second other side of the first conductive pattern which is opposite to the first side of the first conductive pattern.