摘要:
A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiOxCy layer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing C2H4, SiH4, and CO2 with an C2H4/SiH4 ratio of less than or equal to 3.3 by volume, at a temperature of between 600° C. and 680° C.; (ii) forming a SiO2 layer or a carbon-poor silicon oxycarbide layer with a mean C/Si ratio of less than 0.2 on the carbon-rich SiOxCy layer, thereby obtaining a layered substrate; (iii) annealing and/or shaping the layered substrate at a temperature of between 580° C. and 700° C.; (iv) activating the SiO2 layer or the carbon-poor silicon oxycarbide layer by plasma treatment or acidic or basic chemical treatment; and (v) grafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiO2 layer or the carbon-poor silicon oxycarbide layer.
摘要:
The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer mad of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1
摘要:
The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer made of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1
摘要翻译:本发明涉及一种玻璃,其包括含有至少一种碱金属的离子的透明玻璃基板和由总厚度为E的碳氧化硅(SiO x C y)制成的透明层,(a)富碳深层,从深度 P3至深度P4,其中C / Si原子比大于或等于0.5,以及(b)从深度P1延伸到深度P2的碳贫表面区,其中C / Si原子比为 小于或等于0.4,P1
摘要:
The invention relates to a process for the manufacture of a hydrophobic glazing comprising the following successive stages:(a) formation of a carbon-rich silicon oxycarbide (SiOxCy) layer at the surface of a substrate made of mineral glass by chemical vapor deposition (CVD) over at least a portion of the surface of said substrate by bringing said surface into contact with a stream of reactive gases comprising ethylene (C2H4), silane (SiH4) and carbon dioxide (CO2) at a temperature of between 600° C. and 680° C., the ethylene/silane (C2H4/SiH4) ratio by volume during stage (a) being less than or equal to 3.3,(b) formation of an SiO2 layer on the silicon oxycarbide layer deposited in stage (a) or(b′) formation of a carbon-poor silicon oxycarbide layer exhibiting a mean C/Si ratio of less than 0.2,(c) annealing and/or shaping the substrate obtained on conclusion of stage (b) or (b′) at a temperature of between 580° C. and 700° C.,(d) activation of the silica layer, formed in stage (b), or of the silicon oxycarbide layer, formed in stage (b′), by plasma treatment or acidic or basic chemical treatment, and(e) grafting, by covalent bonding, a fluorinated hydrophobic agent.It also relates to a hydrophobic glazing, preferably a windshield, capable of being obtained by such a process.
摘要翻译:本发明涉及一种用于制造疏水玻璃的方法,其包括以下连续阶段:(a)通过化学气相沉积(CVD)在由矿物玻璃制成的基材的表面上形成富碳硅碳氧化物(SiO x C C)层 )通过使所述表面与包含乙烯(C 2 H 4),硅烷(SiH 4)和二氧化碳(CO 2)的反应性气体流在600℃和...之间的温度下与所述基材的表面的至少一部分接触, (a)期间的乙烯/硅烷(C 2 H 4 / SiH 4)体积比小于或等于3.3,(b)在阶段(a)中沉积的碳氧化硅层上形成SiO 2层,或 (b')形成平均C / Si比小于0.2的碳不足的碳硅氧化物层,(c)在(b)或(b')结束时获得的基板的退火和/或成形在 温度在580℃至700℃之间,(d)二氧化硅层的活化 阶段(b)或阶段(b')中形成的碳氧化硅层,通过等离子体处理或酸性或碱性化学处理,和(e)通过共价键接枝氟化疏水剂。 它还涉及能够通过这种方法获得的疏水性玻璃,优选挡风玻璃。