公开(公告)号：US20230395389A1

公开(公告)日：2023-12-07

申请号：US18032486

申请日：2021-10-12

申请人： Resonac Corporation

发明人： Jumpei IWASAKI ,  Yosuke TANIMOTO ,  Kazuma MATSUI

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01J2237/3346

摘要： An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.

公开(公告)号：US20240282583A1

公开(公告)日：2024-08-22

申请号：US18568637

申请日：2022-06-02

申请人： RESONAC CORPORATION

发明人： Jumpei IWASAKI ,  Kazuma MATSUI

IPC分类号： H01L21/311

CPC分类号： H01L21/31122

摘要： Provided is a dry etching method capable of selectively etching an etching object containing lanthanum as compared with a non-etching object at a sufficient etching rate without plasma. The dry etching method includes a dry etching step of bringing an etching gas containing nitrosyl fluoride into contact with a member to be etched (12) having an etching object that is to be etched by the etching gas and having a non-etching object that is not to be etched by the etching gas, to selectively etch the etching object as compared with the non-etching object without plasma. The etching object contains lanthanum.