公开(公告)号：US20170287802A1

公开(公告)日：2017-10-05

申请号：US15430455

申请日：2017-02-11

Applicant: Renesas Electronics Corporation

Inventor： Hideo NUMABE ,  Koji TATENO ,  Yusuke OJIMA ,  Yoshihiko YOKOI ,  Shinya ISHIDA ,  Hitoshi MATSUURA

IPC: H01L23/34 ,  H01L23/528 ,  H01L29/06 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/306 ,  H01L21/265 ,  H01L21/3205 ,  H03K17/16 ,  H01L49/02

CPC classification number: H01L23/34 ,  H01L21/26513 ,  H01L21/2855 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32055 ,  H01L21/823412 ,  H01L23/5228 ,  H01L23/5286 ,  H01L23/53271 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/0692 ,  H01L29/7393 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H03K17/16 ,  H03K2017/0806 ,  H03K2217/0027 ,  H03K2217/0063 ,  H03K2217/0072

Abstract: A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.