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公开(公告)号：US10707547B2
公开(公告)日：2020-07-07
申请号：US16018768
申请日：2018-06-26
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner , Jason C. Soric
Abstract: A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a magnetic material having first and second opposing surfaces. A first conductor is disposed on the first surface of the magnetic material, where a width of the first conductor decreases from a first end of the FSL to a second end of the FSL along a length of the FSL. Two second conductors are disposed on the second surface of the magnetic material, where a width of a gap between the two second conductors decreases from the first end of the FSL to the second end of the FSL along a length of the FSL. The first conductor and two second conductors form a biplanar waveguide transmission line.
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公开(公告)号：US10608310B1
公开(公告)日：2020-03-31
申请号：US16530056
申请日：2019-08-02
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Jason C. Soric , Gerhard Sollner
Abstract: A frequency selective limiter (FSL) having an input port and an output port can comprise a plurality of vertically stacked transmission line structures. Each of the transmission line structures can be electrically coupled to a transmission line structure disposed directly above it and with a first one of the plurality of vertically stacked transmission line structures having one end corresponding to the FSL input port and a second one of the plurality of vertically stacked transmission line structures having one end corresponding to the FSL output port. Each of the plurality of vertically stacked transmission line structures can comprise a magnetic material having first and second opposing surfaces and one or more conductors disposed on at least one of the surfaces of the magnetic material.
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公开(公告)号：US11588218B1
公开(公告)日：2023-02-21
申请号：US17399510
申请日：2021-08-11
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner , Jason D. Adams , Poornima Varadarajan , Evelina Aleksandro Polyzoeva , Thomas M. Hartnett
Abstract: Methods and apparatus for a frequency selective limiter (FSL) having a magnetic material substrate that tapers in thickness and supports a transmission line that has segments and bends. The segments, which differ in width and are substantially parallel to each other, such that each segment traverses the substrate on a constant thickness of the substrate.
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公开(公告)号：US20180366803A1
公开(公告)日：2018-12-20
申请号：US15627913
申请日：2017-06-20
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner
CPC classification number: H01P1/215 , H01P1/218 , H01P1/227 , H01P1/23 , H01P3/003 , H03G11/006 , H03H2/001 , H03H7/38
Abstract: A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a substrate having a magnetic material, a signal (or center) conductor disposed on the substrate and first and second ground plane conductors disposed on the substrate. The signal conductor having a first end with a first width and a second end with a second different width such that the signal conductor is provided having a taper between the first and second ends of the signal conductor. First and second ground plane conductors are spaced apart from first and second edges of signal conductor, respectively, by a distance that changes from the first end of signal conductor to the second end of signal conductor such that signal conductor, and first and second ground plane conductors form a co-planar waveguide transmission line.
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公开(公告)号：US09711839B2
公开(公告)日：2017-07-18
申请号：US14996881
申请日：2016-01-15
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner
CPC classification number: H01P9/00 , H01P1/2039 , H01P1/227 , H01P1/365 , H01P9/02
Abstract: The present disclosure is directed towards a frequency selective limiter having a first magnetic material disposed over a first dielectric material and a strip conductor disposed over the magnetic material. In some embodiments, the frequency selective limiter includes a second magnetic material disposed over the strip conductor and a second dielectric material disposed over the second magnetic material. The first and second dielectric material may have a lower relative permittivity than the first and second magnetic material. In an embodiment, the frequency selective limiter includes a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.
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Patent Agency Ranking
公开(公告)号：US20160181679A1
公开(公告)日：2016-06-23
申请号：US14996881
申请日：2016-01-15
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner
CPC classification number: H01P9/00 , H01P1/2039 , H01P1/227 , H01P1/365 , H01P9/02
Abstract: The present disclosure is directed towards a frequency selective limiter having a first magnetic material disposed over a first dielectric material and a strip conductor disposed over the magnetic material. In some embodiments, the frequency selective limiter includes a second magnetic material disposed over the strip conductor and a second dielectric material disposed over the second magnetic material. The first and second dielectric material may have a lower relative permittivity than the first and second magnetic material. In an embodiment, the frequency selective limiter includes a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.
Abstract translation: 本公开涉及一种频率选择限制器，其具有设置在第一电介质材料上的第一磁性材料和设置在磁性材料上的带状导体。 在一些实施例中，频率选择限制器包括设置在带状导体上的第二磁性材料和设置在第二磁性材料上的第二介电材料。 第一和第二介电材料可以具有比第一和第二磁性材料低的相对介电常数。 在一个实施例中，频率选择限制器包括慢波结构，其设置为将由慢波结构传播的电磁能产生的磁场磁耦合到磁性材料中。
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公开(公告)号：US09231064B1
公开(公告)日：2016-01-05
申请号：US14457436
申请日：2014-08-12
Applicant: Raytheon Company
Inventor： Shahed Reza , Eduardo M. Chumbes , Thomas E. Kazior , Gerhard Sollner
IPC: H01L29/778 , H01L29/66 , H01L21/335 , H01L29/36 , H01L29/205 , H01L29/20 , H01L21/265
CPC classification number: H01L29/36 , H01L21/2654 , H01L29/2003 , H01L29/205 , H01L29/365 , H01L29/66462 , H01L29/7784 , H01L29/7786 , H01L29/7787 , H01L29/7788 , H01L29/7789
Abstract: A semiconductor structure having: a Group III-N channel layer, a Group III-N top-barrier polarization-generating layer forming a heterojunction with an upper surface of the channel layer; and a Group III-N back-barrier polarization-generating layer forming a heterojunction with a lower surface of the channel layer. The channel layer has disposed therein a predetermined n-type conductive dopant.
Abstract translation: 一种半导体结构，其具有：III-N族沟道层，与所述沟道层的上表面形成异质结的III-N族顶部势垒极化发生层; 以及与沟道层的下表面形成异质结的III-N族背向阻挡极化发生层。 沟道层在其中设置有预定的n型导电掺杂剂。
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公开(公告)号：US20190393578A1
公开(公告)日：2019-12-26
申请号：US16018768
申请日：2018-06-26
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner , Jason C. Soric
Abstract: A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a magnetic material having first and second opposing surfaces. A first conductor is disposed on the first surface of the magnetic material, where a width of the first conductor decreases from a first end of the FSL to a second end of the FSL along a length of the FSL. Two second conductors are disposed on the second surface of the magnetic material, where a width of a gap between the two second conductors decreases from the first end of the FSL to the second end of the FSL along a length of the FSL. The first conductor and two second conductors form a biplanar waveguide transmission line.
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公开(公告)号：US20230052113A1
公开(公告)日：2023-02-16
申请号：US17399510
申请日：2021-08-11
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner , Jason D. Adams , Poornima Varadarajan , Evelina Aleksandro Polyzoeva , Thomas M. Hartnett
Abstract: Methods and apparatus for a frequency selective limiter (FSL) having a magnetic material substrate that tapers in thickness and supports a transmission line that has segments and bends. The segments, which differ in width and are substantially parallel to each other, such that each segment traverses the substrate on a constant thickness of the substrate.
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公开(公告)号：US10461384B2
公开(公告)日：2019-10-29
申请号：US15627913
申请日：2017-06-20
Applicant: Raytheon Company
Inventor： Matthew A. Morton , Gerhard Sollner
Abstract: A frequency selective limiter (FSL) is provided having a transmission line structure with a tapered width. The FSL includes a substrate having a magnetic material, a signal (or center) conductor disposed on the substrate and first and second ground plane conductors disposed on the substrate. The signal conductor having a first end with a first width and a second end with a second different width such that the signal conductor is provided having a taper between the first and second ends of the signal conductor. First and second ground plane conductors are spaced apart from first and second edges of signal conductor, respectively, by a distance that changes from the first end of signal conductor to the second end of signal conductor such that signal conductor, and first and second ground plane conductors form a co-planar waveguide transmission line.
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