公开(公告)号：US11217670B2

公开(公告)日：2022-01-04

申请号：US16722355

申请日：2019-12-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuji Takahashi ,  Masaki Watanabe ,  Masashi Sahara ,  Kentaro Yamada ,  Masaki Sakashita ,  Shinichi Maeda ,  Yoshiaki Yamada

IPC: H01L29/417 ,  H01L29/732 ,  H01L21/324 ,  H01L29/40 ,  H01L21/02 ,  H01L29/47

Abstract: A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.