Vacuum package fabrication of integrated circuit components
    1.
    发明申请
    Vacuum package fabrication of integrated circuit components 有权
    集成电路元件的真空封装制造

    公开(公告)号:US20040219764A1

    公开(公告)日:2004-11-04

    申请号:US10428627

    申请日:2003-05-02

    CPC classification number: B81C1/00269

    Abstract: A method for manufacturing integrated circuit device lids includes creating a lid cavity on the surface of a lid wafer, forming a sealing surface on the lid wafer that surrounds the lid cavity, and forming a trench on the lid wafer between the lid cavity and the sealing surface. The resulting structure uptakes excess sealing surface material and prevents such material from entering the lid cavity.

    Abstract translation: 集成电路器件盖的制造方法包括在盖晶片的表面上形成盖腔,在盖晶片上形成围绕盖腔的密封面,并且在盖体和盖密封之间形成沟槽 表面。 所产生的结构吸收多余的密封表面材料并防止这种材料进入盖腔。

    Vacuum package fabrication of integrated circuit components
    3.
    发明申请
    Vacuum package fabrication of integrated circuit components 有权
    集成电路元件的真空封装制造

    公开(公告)号:US20020000646A1

    公开(公告)日:2002-01-03

    申请号:US09928031

    申请日:2001-08-10

    CPC classification number: B81B7/0077 H01L2924/0002 Y10S438/909 H01L2924/00

    Abstract: A method for vacuum packaging MEMS or similar devices during device fabrication comprises forming a plurality of MEMS devices (12), or similar devices, on a device wafer (10). A device sealing ring (16) is formed between the MEMS devices (12) and bonding pads (14) connected to a MEMS device. A solder adhesion layer (24) forms part of the device sealing ring (16) surrounding each MEMS or similar device (12). A lid wafer (30) is formed having a plurality of lid sealing rings (32) corresponding in number and location to the device sealing rings (16). Each lid sealing ring (32) surrounds a cavity (34). The device wafer (30) is aligned with the lid wafer (10) to align each device sealing ring (16) with the corresponding lid sealing ring (32), leaving a gap between the lid wafer (30) and the device wafer (10). The resulting assembly (50) is placed in a vacuum furnace. The vacuum furnace is evacuated and heated to a temperature sufficient to allow outgassing of all surface areas of the lid wafer (30) and the device (10). The device wafer (30) is brought into contact with the lid wafer (10) thereby creating a vacuum package over each MEMS device (12). The assembly (50) is cooled at a rate sufficient to minimize subsequent outgassing of the surfaces while minimizing thermal stresses upon the vacuum package. After the assembly (50) is cooled, each vacuum packaged MEMS device (12) is tested, and the assembly (50) is then diced into individual vacuum packaged MEMS devices (12).

    Abstract translation: 在器件制造过程中,用于真空封装MEMS或类似器件的方法包括在器件晶片(10)上形成多个MEMS器件(12)或类似器件。 在MEMS器件(12)和连接到MEMS器件的接合焊盘(14)之间形成器件密封环(16)。 焊接粘合层(24)形成围绕每个MEMS或类似装置(12)的装置密封环(16)的一部分。 盖子晶片(30)形成为具有多个对应于设备密封环(16)的数量和位置的盖子密封环(32)。 每个盖密封环(32)围绕空腔(34)。 器件晶片(30)与盖晶片(10)对准,以使每个器件密封环(16)与相应的盖密封环(32)对齐,在盖晶片(30)和器件晶片(10)之间留有间隙 )。 将所得的组件(50)放置在真空炉中。 将真空炉抽真空并加热到足以使盖晶片(30)和装置(10)的所有表面区域除气的温度。 器件晶片(30)与盖晶片(10)接触,从而在每个MEMS器件(12)上形成真空封装。 组件(50)以足以使随后的表面脱气最小化的速率被冷却,同时最小化真空包装上的热应力。 在组装(50)被冷却之后,测试每个真空封装的MEMS器件(12),然后将组件(50)切成单个真空封装的MEMS器件(12)。

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