公开(公告)号：US20180062636A1

公开(公告)日：2018-03-01

申请号：US15634800

申请日：2017-06-27

Applicant: Qualcomm Incorporated

Inventor： Hayg-Taniel Dabag ,  Bhushan Shanti Asuri ,  Hongyan Yan ,  Sy-Chyuan Hwu ,  Youngchang Yoon

IPC: H03K17/16

CPC classification number: H03K17/161 ,  H03K17/063 ,  H03K17/693 ,  H03K2217/0054 ,  H04B1/44

Abstract: Various aspects of this disclosure describe configuring and operating a transistor switch. Examples include a self-biasing circuit that contains a diode-connected transistor whose source or drain is connected to the gate of a transistor configured as a switch. The diode-connected transistor is enabled and disabled responsive to voltage swings in the input signal to the transistor configured as a switch. When enabled, the diode-connected transistor may charge the floating gate voltage of the transistor configured as a switch. When disabled, the diode-connected transistor may acts as a high impedance to inhibit voltage discharge from the gate of the transistor configured as a switch.