公开(公告)号：US20160254056A1

公开(公告)日：2016-09-01

申请号：US14633793

申请日：2015-02-27

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Xiao LU ,  Xiaonan CHEN ,  Zhongze WANG

IPC: G11C16/10 ,  G11C17/18 ,  G11C16/04 ,  G11C17/16

CPC classification number: G11C16/10 ,  G11C16/0466 ,  G11C17/146 ,  G11C17/16 ,  G11C17/18 ,  H01L27/11206 ,  H01L29/42348 ,  H01L29/7923

Abstract: A semiconductor device for a one-time programmable (OTP) memory according to some examples of the disclosure includes a gate, a dielectric region below the gate, a source terminal below the dielectric region and offset to one side, a drain terminal below the dielectric region and offset to an opposite side from the source terminal, a drain side charge trap in the dielectric region capable of programming the semiconductor device, and a source side charge trap in the dielectric region opposite the drain side charge trap and capable of programming the semiconductor device.

Abstract translation: 根据本公开的一些示例的用于一次可编程（OTP）存储器的半导体器件包括栅极，栅极下方的介电区域，介质区域下方的偏移并且偏移到一侧的源极端子，电介质下方的漏极端子 并且偏移到与源极端子相反的一侧，在能够编程半导体器件的电介质区域中的漏极侧电荷阱，以及与漏极侧电荷阱相对的电介质区域中的源极电荷陷阱，并且能够对半导体 设备。

公开(公告)号：US20190156895A1

公开(公告)日：2019-05-23

申请号：US16260026

申请日：2019-01-28

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Xiao LU ,  Xiaonan CHEN ,  Zhongze WANG

IPC: G11C16/10 ,  G11C17/14 ,  H01L27/112 ,  H01L29/792 ,  G11C16/04 ,  G11C17/18 ,  G11C17/16 ,  H01L29/423

Abstract: A semiconductor device for a one-time programmable (OTP) memory according to some examples of the disclosure includes a gate, a dielectric region below the gate, a source terminal below the dielectric region and offset to one side, a drain terminal below the dielectric region and offset to an opposite side from the source terminal, a drain side charge trap in the dielectric region capable of programming the semiconductor device, and a source side charge trap in the dielectric region opposite the drain side charge trap and capable of programming the semiconductor device.