PSEUDO-EMULATED PEAK CURRENT MODE FOR THREE-LEVEL BUCK CONVERTER

    公开(公告)号:US20250088105A1

    公开(公告)日:2025-03-13

    申请号:US18465019

    申请日:2023-09-11

    Abstract: Certain aspects of the present disclosure generally relate to techniques for operating a three-level buck converter. An example method for operating the three-level buck converter may include: identifying a voltage value based on an input voltage of the three-level buck converter; determining an emulated current for an inductive element of the three-level buck converter based on an expression having a variable associated with a voltage across a flying capacitive element of the three-level buck converter, wherein determining the emulated current comprises assuming the variable to have the voltage value; comparing the emulated current to a threshold; and controlling at least one transistor of the three-level buck converter based on the comparison.

    LOSSLESS AVERAGE INPUT AND OUTPUT CURRENT SENSING IN A SWITCHED-MODE POWER SUPPLY

    公开(公告)号:US20190379270A1

    公开(公告)日:2019-12-12

    申请号:US16004536

    申请日:2018-06-11

    Abstract: Methods and apparatus for current sensing and error correction in a switched-mode power supply composed of a high-side transistor coupled to a low-side transistor are described. One example method generally includes capturing a current associated with the low-side transistor at a first time corresponding to the low-side transistor turning off; capturing a current associated with the high-side transistor at a second time corresponding to a first delay after the high-side transistor turns on; capturing the current associated with the high-side transistor at a third time corresponding to the high-side transistor turning off; and applying a first correction current to a current-summing node of the current-sensing circuit for a first interval based on the first delay, wherein the first correction current is based on the captured current associated with the low-side transistor at the first time and on the captured current associated with the high-side transistor at the second time.

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