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Patent Agency Ranking
公开(公告)号：US20200007098A1
公开(公告)日：2020-01-02
申请号：US16115448
申请日：2018-08-28
Applicant: Qualcomm Incorporated
Inventor： Hung-Min Cheng , Ara Bicakci , Haitao Gan , Shen Wang , Mounir Bohsali , Hedieh Elyasi , Beomsup Kim
Abstract: An apparatus is disclosed for dual-mode amplification by varying a load impedance. In an example aspect, the apparatus includes a low-noise amplifier, a first component, a second component, and a switch. The first component has a first input impedance. The second component is coupled between the low-noise amplifier and the first component. The second component has a second input impedance that is greater than the first input impedance. The switch is coupled in parallel with the second component between the low-noise amplifier and the first component. The switch is configured to selectively be in an open state to engage the second component or a closed state to bypass the second component.
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2.发明授权公开(公告)号：US10050586B2
公开(公告)日：2018-08-14
申请号：US15438138
申请日：2017-02-21
Applicant: QUALCOMM Incorporated
Inventor： Thinh Cat Nguyen , Jeongsik Yang , Roger Thomas Brockenbrough , Ara Bicakci , Anup Savla , Shen Wang
IPC: H03B5/12
Abstract: Certain aspects of the present disclosure generally relate to voltage-controlled oscillators (VCOs) using a lowered or an adjustable negative transconductance (−gm) compared to conventional VCOs. This −gm degeneration technique suppresses the noise injected into an inductor-capacitor (LC) tank of the VCO, thereby providing lower signal-to-noise ratio (SNR) for a given VCO voltage swing, lower power consumption, and decreased phase noise. One example VCO generally includes a resonant tank circuit, an active negative transconductance circuit connected with the resonant tank circuit, and a bias current circuit for sourcing or sinking a bias current through the resonant tank circuit and the active negative transconductance circuit to generate an oscillating signal. The active negative transconductance circuit includes cross-coupled transistors and an impedance connected between the cross-coupled transistors and a reference voltage.
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3.发明授权公开(公告)号：US09634607B2
公开(公告)日：2017-04-25
申请号：US14204542
申请日：2014-03-11
Applicant: QUALCOMM Incorporated
Inventor： Thinh Cat Nguyen , Jeongsik Yang , Roger Thomas Brockenbrough , Ara Bicakci , Anup Savla , Shen Wang
CPC classification number: H03B5/1212 , H03B5/1215 , H03B5/1228 , H03B5/1237 , H03B5/1262 , H03B5/1278 , H03B5/1287 , H03B2200/0038 , H03B2200/0082 , H03B2200/009 , H04B1/40
Abstract: Certain aspects of the present disclosure generally relate to voltage-controlled oscillators (VCOs) using a lowered or an adjustable negative transconductance (−gm) compared to conventional VCOs. This −gm degeneration technique suppresses the noise injected into an inductor-capacitor (LC) tank of the VCO, thereby providing lower signal-to-noise ratio (SNR) for a given VCO voltage swing, lower power consumption, and decreased phase noise. One example VCO generally includes a resonant tank circuit, an active negative transconductance circuit connected with the resonant tank circuit, and a bias current circuit for sourcing or sinking a bias current through the resonant tank circuit and the active negative transconductance circuit to generate an oscillating signal. The active negative transconductance circuit includes cross-coupled transistors and an impedance connected between the cross-coupled transistors and a reference voltage.
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公开(公告)号：US09438249B1
公开(公告)日：2016-09-06
申请号：US14860027
申请日：2015-09-21
Applicant: QUALCOMM Incorporated
Inventor： Thinh Cat Nguyen , Jeongsik Yang , Ara Bicakci , Shen Wang , Anup Savla
Abstract: Certain aspects of the present disclosure provide methods and apparatus for temperature-dependent adjustment of a resonant circuit, such as that found in a voltage-controlled oscillator (VCO). Such adjustment may be performed in an effort to compensate for the frequency drift of the resonant circuit due to temperature changes. One example adjustment circuit for temperature-dependent adjustment of a resonant circuit generally includes at least one varactor and two sets of semiconductor devices configured to apply, across the at least one varactor, a differential adjustment voltage based on an ambient temperature of the semiconductor devices to adjust a capacitance of the at least one varactor, wherein each device in the sets of semiconductor devices has a temperature-dependent junction and wherein the two sets of semiconductor devices are configured such that voltage changes of the temperature-dependent junctions in the two sets of semiconductor devices are added in the differential adjustment voltage.
Abstract translation: 本公开的某些方面提供了用于谐振电路的温度依赖性调节的方法和装置，例如在压控振荡器（VCO）中发现的谐振电路。 可以进行这种调整以努力补偿由于温度变化引起的谐振电路的频率漂移。 用于谐振电路的温度依赖性调节的一个示例性调节电路通常包括至少一个变容二极管和两组半导体器件，其被配置为跨越至少一个变容二极管将基于半导体器件的环境温度的差分调节电压施加到 调整所述至少一个变容二极管的电容，其中所述半导体器件组中的每个器件具有温度依赖性结，并且其中所述两组半导体器件被配置为使得两组中的温度依赖性结的电压变化 半导体器件被添加在差分调整电压中。
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公开(公告)号：US20160006422A1
公开(公告)日：2016-01-07
申请号：US14322603
申请日：2014-07-02
Applicant: QUALCOMM Incorporated
Inventor： Thinh Cat Nguyen , Jeongsik Yang , Shen Wang , Ara Bicakci , Anup Savla , Babak Vakili-Amini
CPC classification number: H03K3/012 , H03K3/356139
Abstract: A dynamic latch is disclosed that may reduce power consumption in frequency dividers while widening their frequency operation ranges. The dynamic latch includes a sense component to detect an input voltage in response to a first state of a mode select signal, and to generate an output voltage based, at least in part, on the input voltage; a hold component to retain the output voltage in response to a second state of the mode select signal; and a first transistor, coupled between the sense component and ground potential, including a gate responsive to the mode select signal.
Abstract translation: 公开了一种动态锁存器，其可以在扩大其频率操作范围的同时降低分频器中的功率消耗。 动态锁存器包括响应于模式选择信号的第一状态来检测输入电压并且至少部分地基于输入电压产生输出电压的感测部件; 保持部件，用于响应于模式选择信号的第二状态来保持输出电压; 以及第一晶体管，耦合在感测组件和地电位之间，包括响应于模式选择信号的门。
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