公开(公告)号：US10063219B1

公开(公告)日：2018-08-28

申请号：US15663209

申请日：2017-07-28

Applicant: QUALCOMM Incorporated

Inventor： Manish Srivastava ,  Satadru Sarkar ,  Samarth Vasishtha

IPC: H03K19/0175 ,  H03K3/356 ,  H03K19/0185 ,  H03K19/003 ,  H03K19/094

CPC classification number: H03K3/356113 ,  H03K19/00315 ,  H03K19/018521 ,  H03K19/09429

Abstract: Aspects of the disclosure are directed to a voltage level shifter architecture, including a voltage level shifter with circuitry residing within a footprint; and an internal augmented voltage generator residing within the footprint, wherein the internal augmented voltage generator is coupled to the voltage level shifter to augment a voltage level shift.