MULTI POWER DOMAINS TO REDUCE OCV USING CPR INFRASTRUCTURE

    公开(公告)号:US20180173288A1

    公开(公告)日:2018-06-21

    申请号:US15385529

    申请日:2016-12-20

    CPC classification number: G06F1/3296 G06F1/04 G06F1/3206 H03K3/0315

    Abstract: According to certain aspects, a system includes frequency measurement devices distributed across a power domain on a chip, wherein the power domain is divided into multiple power sub-domains, and each of the power sub-domains includes a respective subset of the frequency measurement devices. The system also includes a power manager. For each of the power sub-domains, the power manager is configured to receive frequency measurements from the respective subset of the frequency measurement devices, and determine a supply voltage setting for the power sub-domain based on the received frequency measurements from the respective subset of the frequency measurement devices.

    THERMAL METAL GROUND FOR INTEGRATED CIRCUIT RESISTORS
    3.
    发明申请
    THERMAL METAL GROUND FOR INTEGRATED CIRCUIT RESISTORS 有权
    用于集成电路电阻的热金属接地

    公开(公告)号:US20150237709A1

    公开(公告)日:2015-08-20

    申请号:US14181187

    申请日:2014-02-14

    Abstract: Metal thermal grounds are used for dissipating heat from integrated-circuit resistors. The resistors may be formed using a front end of line layer, for example, a titanium-nitride layer. A metal region (e.g., in a first metal layer) is located over the resistors to form a heat sink. An area of thermal posts connected to the metal region is also located over the resistor. The metal region can be connected to the substrate of the integrated circuit to provide a low impedance thermal path out of the integrated circuit.

    Abstract translation: 金属热源用于散热集成电路电阻。 可以使用线路层的前端,例如氮化钛层来形成电阻器。 金属区域(例如,在第一金属层中)位于电阻器上方以形成散热器。 连接到金属区域的热柱的区域也位于电阻器上方。 金属区域可以连接到集成电路的基板,以提供出集成电路外的低阻抗热路径。

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