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公开(公告)号：US08901989B2
公开(公告)日：2014-12-02
申请号：US13841703
申请日：2013-03-15
Applicant: QUALCOMM Incorporated
Inventor： Narendra Singh Mehta , Lennart Karl-Axel Mathe
CPC classification number: H03K17/145 , H03K17/063
Abstract: An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s).
Abstract translation: 公开了可以产生具有MOSFET的温度补偿的栅极偏置电压的自适应栅极驱动电路。 自适应栅极驱动电路可以产生具有可变驱动能力的栅极偏置电压，以在较高温度下抵抗MOSFET的较高栅极漏电流。 在一种设计中，装置包括控制电路和栅极驱动电路。 控制电路产生至少一个控制信号，该控制信号具有基于感测到的MOSFET温度确定的可变频率。 例如，可以基于感测到的MOSFET的温度来确定时钟分频比，可以基于时钟分频比对输入时钟信号进行分频以获得可变时钟信号，并且可以基于 对可变时钟信号。 栅极驱动电路根据控制信号产生MOSFET的偏置电压。
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Patent Agency Ranking
公开(公告)号：US20140266011A1
公开(公告)日：2014-09-18
申请号：US13841511
申请日：2013-03-15
Applicant: QUALCOMM INCORPORATED
Inventor： Narendra Singh Mehta , Chris M. Rosolowski , Sandeep Chaman Dhar , Todd R. Sutton
IPC: H02J7/00
CPC classification number: H02J7/0042 , H02J7/0055 , H02J2007/0059 , H02M3/1582 , H02M3/1584 , H02M2001/0067 , H02M2001/008
Abstract: An electronic device is described. The electronic device includes a first port. The electronic device also includes a second port. The electronic device further includes a multiphase charger. The multiphase charger includes a first buck. The multiphase charger also includes a second buck. The multiphase charger further includes a first port switch. The multiphase charger also includes a second port switch. The multiphase charger further includes a reverse boost switch. The multiphase charger also includes a multiphase switch.
Abstract translation: 描述电子设备。 电子设备包括第一端口。 电子设备还包括第二端口。 电子设备还包括多相充电器。 多相充电器包括第一降压。 多相充电器还包括第二降压。 多相充电器还包括第一端口开关。 多相充电器还包括第二端口开关。 多相充电器还包括反向升压开关。 多相充电器还包括多相开关。
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公开(公告)号：US20140028357A1
公开(公告)日：2014-01-30
申请号：US13841703
申请日：2013-03-15
Applicant: QUALCOMM INCORPORATED
Inventor： Narendra Singh Mehta , Lennart Karl-Axel Mathe
IPC: H03K17/14
CPC classification number: H03K17/145 , H03K17/063
Abstract: An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s).
Abstract translation: 公开了可以产生具有MOSFET的温度补偿的栅极偏置电压的自适应栅极驱动电路。 自适应栅极驱动电路可以产生具有可变驱动能力的栅极偏置电压，以在较高温度下抵抗MOSFET的较高栅极漏电流。 在一种设计中，装置包括控制电路和栅极驱动电路。 控制电路产生至少一个控制信号，该控制信号具有基于感测到的MOSFET温度确定的可变频率。 例如，可以基于感测到的MOSFET的温度来确定时钟分频比，可以基于时钟分频比对输入时钟信号进行分频以获得可变时钟信号，并且可以基于 对可变时钟信号。 栅极驱动电路根据控制信号产生MOSFET的偏置电压。
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公开(公告)号：US09219369B2
公开(公告)日：2015-12-22
申请号：US13841511
申请日：2013-03-15
Applicant: QUALCOMM Incorporated
Inventor： Narendra Singh Mehta , Chris M Rosolowski , Sandeep Chaman Dhar , Todd R Sutton
CPC classification number: H02J7/0042 , H02J7/0055 , H02J2007/0059 , H02M3/1582 , H02M3/1584 , H02M2001/0067 , H02M2001/008
Abstract: An electronic device is described. The electronic device includes a first port. The electronic device also includes a second port. The electronic device further includes a multiphase charger. The multiphase charger includes a first buck. The multiphase charger also includes a second buck. The multiphase charger further includes a first port switch. The multiphase charger also includes a second port switch. The multiphase charger further includes a reverse boost switch. The multiphase charger also includes a multiphase switch.
Abstract translation: 描述电子设备。 电子设备包括第一端口。 电子设备还包括第二端口。 电子设备还包括多相充电器。 多相充电器包括第一降压。 多相充电器还包括第二降压。 多相充电器还包括第一端口开关。 多相充电器还包括一个第二端口开关。 多相充电器还包括反向升压开关。 多相充电器还包括多相开关。
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5.发明授权Parallel arrangement of asynchronous buck converters for advanced power capability 有权并联排列异步降压转换器，实现先进的电源功能公开(公告)号：US09119162B2
公开(公告)日：2015-08-25
申请号：US13770734
申请日：2013-02-19
Applicant: QUALCOMM Incorporated
Inventor： Adrian M Stenzel , Todd R Sutton , Narendra Singh Mehta , Siegfried W Breitmeier , Gordon P Lee
CPC classification number: H04W52/0296 , G05F1/66 , G06F1/263 , H02J1/102 , H02M2001/0045 , H04W52/0277 , H05K1/0254 , Y02D70/1242 , Y02D70/1262
Abstract: A method and apparatus for extending the driving capacity of a power management device are provided. The method involves determining an energy requirement for the operation of a power management device. Next, the method compares the energy requirement for the operation of a power management device with a capability of a first power device. If the energy requirement is greater than the energy requirement of the first power device, the energy is switched to a second power device of higher capacity. The apparatus includes: a first power device; a second power device connected in parallel to the first power device; a first inductor connected to the first power device and a capacitor connected to the first inductor; and a second inductor connected to a second power device and a capacitor connected to the second inductor.
Abstract translation: 提供了一种用于延长电力管理装置的驱动能力的方法和装置。 该方法涉及确定功率管理装置的操作的能量需求。 接下来，该方法将功率管理装置的运行的能量需求与第一功率装置的能力进行比较。 如果能量需求大于第一功率器件的能量需求，则能量切换到更高容量的第二功率器件。 该装置包括：第一功率器件; 与第一功率器件并联连接的第二功率器件; 连接到第一功率器件的第一电感器和连接到第一电感器的电容器; 以及连接到第二功率器件的第二电感器和连接到第二电感器的电容器。
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6.发明申请PARALLEL ARRANGEMENT OF ASYNCHRONOUS BUCK CONVERTERS FOR ADVANCED POWER CAPABILITY 有权用于高功率能力的异步转矩转换器的并联布置公开(公告)号：US20140235299A1
公开(公告)日：2014-08-21
申请号：US13770734
申请日：2013-02-19
Applicant: QUALCOMM INCORPORATED
Inventor： Adrian M. Stenzel , Todd R. Sutton , Narendra Singh Mehta , Siegfried W. Breitmeier , Gordon P. Lee
IPC: H04W52/02
CPC classification number: H04W52/0296 , G05F1/66 , G06F1/263 , H02J1/102 , H02M2001/0045 , H04W52/0277 , H05K1/0254 , Y02D70/1242 , Y02D70/1262
Abstract: A method and apparatus for extending the driving capacity of a power management device are provided. The method involves determining an energy requirement for the operation of a power management device. Next, the method compares the energy requirement for the operation of a power management device with a capability of a first power device. If the energy requirement is greater than the energy requirement of the first power device, the energy is switched to a second power device of higher capacity. The apparatus includes: a first power device; a second power device connected in parallel to the first power device; a first inductor connected to the first power device and a capacitor connected to the first inductor; and a second inductor connected to a second power device and a capacitor connected to the second inductor.
Abstract translation: 提供了一种用于延长电力管理装置的驱动能力的方法和装置。 该方法涉及确定功率管理装置的操作的能量需求。 接下来，该方法将功率管理装置的运行的能量需求与第一功率装置的能力进行比较。 如果能量需求大于第一功率器件的能量需求，则能量切换到更高容量的第二功率器件。 该装置包括：第一功率器件; 与第一功率器件并联连接的第二功率器件; 连接到第一功率器件的第一电感器和连接到第一电感器的电容器; 以及连接到第二功率器件的第二电感器和连接到第二电感器的电容器。
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