公开(公告)号：US12206400B2

公开(公告)日：2025-01-21

申请号：US17892800

申请日：2022-08-22

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Abhijeet Paul ,  Hyunchul Jung

IPC: H03K17/687 ,  H04B1/44 ,  H01L27/12

Abstract: A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET). The switch FET includes a source region, a drain region, a body region, and a gate region. The RFIC also includes a dynamic bias control circuit. The dynamic bias control circuit includes at least one transistor coupled between the body region and the gate region of the switch FET.

公开(公告)号：US12155381B2

公开(公告)日：2024-11-26

申请号：US18104409

申请日：2023-02-01

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Abhijeet Paul ,  Hyunchul Jung

IPC: H03K17/687

Abstract: A radio frequency (RF) device is described. The RF device includes a switch field effect transistor (FET), having a source region, a drain region, a body region, and a gate region. The RF device also includes a dynamic bias control circuit. The dynamic bias control circuit includes a first transistor coupled to the gate region of the switch FET by a gate resistor. The dynamic bias control circuit also includes a second transistor coupled to the first transistor and coupled to the body region of the switch FET by a body resistor. The dynamic bias control circuit further includes a capacitor coupled to the body region of the switch FET by the body resistor, and the gate region of the switch FET, by the gate resistor.