公开(公告)号：US20240321936A1

公开(公告)日：2024-09-26

申请号：US18189110

申请日：2023-03-23

Applicant: QUALCOMM Incorporated

Inventor： Hsiao-Tsung YEN ,  Xingyi HUA ,  Jeongil Jay KIM

IPC: H01L23/552 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01L23/5227 ,  H01L23/552

Abstract: An integrated device comprising a die substrate, a die interconnection portion coupled to the die substrate, an inductor, and a shield structure. The shield structure comprises a shield frame and a plurality of shield branches coupled to the shield frame, wherein at least one shield branch from the plurality of shield branches comprises a repeating wave shape.

公开(公告)号：US20240321497A1

公开(公告)日：2024-09-26

申请号：US18189910

申请日：2023-03-24

Applicant: QUALCOMM Incorporated

Inventor： Hsiao-Tsung YEN ,  Xingyi HUA ,  Jeongil Jay KIM

IPC: H01F17/00 ,  H01L23/498

CPC classification number: H01F17/0013 ,  H01L23/49822 ,  H01L28/10 ,  H01F2017/002 ,  H01F2017/0086 ,  H01L24/16 ,  H01L2224/16227

Abstract: An integrated device comprising a die substrate; and a die interconnection portion coupled to the die substrate. The die interconnection comprises a first inductor and a second inductor. The first inductor comprises a first spiral comprising a first origin and a first tail and a second spiral comprising a second origin and a second tail.

公开(公告)号：US20240321730A1

公开(公告)日：2024-09-26

申请号：US18189673

申请日：2023-03-24

Applicant: QUALCOMM Incorporated

Inventor： Hsiao-Tsung YEN ,  Xingyi HUA ,  Jeongil Jay KIM

IPC: H01L23/522

CPC classification number: H01L23/5227 ,  H01L28/10 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/0231 ,  H01L2224/02381 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/2105

Abstract: An integrated device comprising a die substrate, a die interconnection portion coupled to the die substrate, and a stacked inductor that includes a first figure 8-shaped inductor and a second figure 8-shaped inductor. The stacked inductor may include a first spiral comprising a first origin and a first tail, a second spiral comprising a second origin and a second tail, a third spiral comprising a third origin and a third tail and a fourth spiral comprising a fourth origin and a fourth tail. The first spiral, the second spiral, the third spiral and the fourth spiral may form the first figure 8-shaped inductor and the second figure 8-shaped inductor. The stacked inductor may be located in the die interconnection.