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    RF circuit with switch transistor with body connection
    1.
    发明授权
    RF circuit with switch transistor with body connection 有权
    射频电路与开关晶体管与主体连接

    公开(公告)号：US09503074B2

    公开(公告)日：2016-11-22

    申请号：US14640377

    申请日：2015-03-06

    Applicant: QUALCOMM Incorporated

    Inventor： Max Samuel Aubain ,  Clint Kemerling

    IPC: H03K17/16 ,  H03K17/687

    CPC classification number: H03K17/162 ,  H03K3/01 ,  H03K17/102 ,  H03K17/30 ,  H03K17/687 ,  H03K17/6871 ,  H03K17/693 ,  H03K2217/0018

    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

    Abstract translation: 在一些方法和装置实施例中，RF电路包括具有源极，漏极，栅极和主体的开关晶体管。 栅极控制电压施加到开关晶体管的栅极。 身体控制电压施加到开关晶体管的主体。 当开关晶体管处于导通状态时，主体控制电压为正偏置电压。 在一些实施例中，RF电路包括通过第一电阻施加到开关晶体管的栅极的控制电压，并通过第二电阻施加到开关晶体管的主体。 第一阻力与第二阻力不同。

    RF circuit with switch transistor with body connection
    2.
    发明授权
    RF circuit with switch transistor with body connection 有权

    公开(公告)号：US10326439B2

    公开(公告)日：2019-06-18

    申请号：US15845549

    申请日：2017-12-18

    Applicant: QUALCOMM Incorporated

    Inventor： Max Aubain ,  Clint Kemerling

    IPC: H03K17/687 ,  H03K17/16 ,  H03K3/01 ,  H03K17/693 ,  H03K17/10 ,  H03K17/30

    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

    RF switch having independently generated gate and body voltages
    4.
    发明授权
    RF switch having independently generated gate and body voltages 有权

    公开(公告)号：US11539360B2

    公开(公告)日：2022-12-27

    申请号：US16936021

    申请日：2020-07-22

    Applicant: QUALCOMM Incorporated

    Inventor： Max Samuel Aubain ,  Clint Kemerling

    IPC: H03K17/16 ,  H03K17/693 ,  H03K17/10 ,  H03K17/30 ,  H03K3/01 ,  H03K17/687

    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

    RF circuit with switch transistor with body connection
    5.
    发明授权
    RF circuit with switch transistor with body connection 有权

    公开(公告)号：US10756724B2

    公开(公告)日：2020-08-25

    申请号：US16413785

    申请日：2019-05-16

    Applicant: QUALCOMM Incorporated

    Inventor： Max Samuel Aubain ,  Clint Kemerling

    IPC: H03K17/693 ,  H03K17/16 ,  H03K17/10 ,  H03K17/30 ,  H03K3/01 ,  H03K17/687

    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

    RF Circuit with Switch Transistor with Body Connection
    6.
    发明申请
    RF Circuit with Switch Transistor with Body Connection 审中-公开

    公开(公告)号：US20190273490A1

    公开(公告)日：2019-09-05

    申请号：US16413785

    申请日：2019-05-16

    Applicant: QUALCOMM Incorporated

    Inventor： Max Samuel Aubain ,  Clint Kemerling

    IPC: H03K17/16 ,  H03K17/30 ,  H03K17/10 ,  H03K17/687 ,  H03K3/01 ,  H03K17/693

    Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

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