公开(公告)号：US20180204101A1

公开(公告)日：2018-07-19

申请号：US15607103

申请日：2017-05-26

Applicant: QUALCOMM Incorporated

Inventor： Maurice Adrianus DE JONGH ,  Jiri STULEMEIJER ,  Perry Wyan LOU ,  Clint KEMERLING ,  David Loweth WINSLOW ,  Anton ARRIAGADA

IPC: G06K19/07 ,  G06K19/073 ,  G06K19/077 ,  G08B13/14 ,  H03B19/05 ,  H01Q1/22

CPC classification number: G06K19/0725 ,  G06K19/073 ,  G06K19/07309 ,  G06K19/07773 ,  G08B13/1454 ,  H01Q1/2225 ,  H03B19/05 ,  H04B1/0458 ,  H04W52/04

Abstract: An antenna tuning circuit achieves robust performance in a closed loop antenna tuning system due to the addition of protection circuits. In one instance, a protection circuit to detect an overload condition based on a threshold value may be included in the antenna tuning circuit. The antenna tuning circuit also includes a protection state register coupled to the protection circuit to store one or more safe states of operation to which the circuit is restored in response to detecting the overload condition. The antenna tuning circuit also includes a bus interface coupled to the protection state register to transmit an indication of a state of operation of the circuit to an external tuning control device coupled to the circuit and to receive pre-defined protection actions from the external tuning control device in response to the indication of the state of operation.

公开(公告)号：US20200350906A1

公开(公告)日：2020-11-05

申请号：US16936021

申请日：2020-07-22

Applicant: QUALCOMM Incorporated

Inventor： Max Samuel AUBAIN ,  Clint KEMERLING

IPC: H03K17/16 ,  H03K17/693 ,  H03K17/10 ,  H03K17/30 ,  H03K3/01 ,  H03K17/687

Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. in some embodiments, an RE circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

公开(公告)号：US20180109252A1

公开(公告)日：2018-04-19

申请号：US15845549

申请日：2017-12-18

Applicant: QUALCOMM Incorporated

Inventor： Max Aubain ,  Clint KEMERLING

IPC: H03K17/16 ,  H03K17/687 ,  H03K3/01 ,  H03K17/693

CPC classification number: H03K17/162 ,  H03K3/01 ,  H03K17/102 ,  H03K17/30 ,  H03K17/687 ,  H03K17/6871 ,  H03K17/693 ,  H03K2217/0018

Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.