公开(公告)号：US20140312500A1

公开(公告)日：2014-10-23

申请号：US13864344

申请日：2013-04-17

Applicant: QUALCOMM INCORPORATED

Inventor： John J. Zhu ,  Zhongze Wang ,  Yang Da

IPC: H01L21/283 ,  H01L21/768 ,  H01L23/50

CPC classification number: H01L21/76894 ,  G03F7/7045 ,  G03F7/70466 ,  H01L21/28123 ,  H01L21/283 ,  H01L21/31 ,  H01L21/469 ,  H01L21/76892 ,  H01L21/76895 ,  H01L23/50 ,  H01L24/27 ,  H01L24/31 ,  H01L2924/0002 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.

Abstract translation: 特征是在半导体芯片上制造的。 这些特征小于用于制造芯片的光刻的阈值。 一种方法包括图案化特征（例如局部互连）的第一部分和要被分离预定距离的特征的第二部分，例如线尖到尖端空间或线空间。 该方法还包括用切割掩模图案化第一部分以形成第一子部分（例如，接触）和第二子部分。 第一子部分的尺寸小于第二预定距离的尺寸，其可以是具有指定宽度分辨率的光刻工艺的线长分辨率。 半导体器件的特征包括第一部分和具有小于第一部分的光刻分辨率的尺寸的第二部分。