公开(公告)号：US12211543B2

公开(公告)日：2025-01-28

申请号：US17940430

申请日：2022-09-08

Applicant: QUALCOMM INCORPORATED

Inventor： Victor Van Der Veen ,  Pankaj Deshmukh ,  Behnam Dashtipour ,  David Hartley

IPC: G11C11/4078 ,  G06F13/16 ,  G11C7/10 ,  G11C11/406

Abstract: Mitigating or managing an effect known as “rowhammer” upon a DRAM device may include a memory controller receiving an activation count threshold value from the DRAM device. The memory controller may detect row activation commands directed to the DRAM device and count the number of the row activation commands. The memory controller may send a mitigative refresh command to the DRAM device based on the result of comparing the counted number of row activation commands with the received activation count threshold value.

公开(公告)号：US12094515B2

公开(公告)日：2024-09-17

申请号：US17890022

申请日：2022-08-17

Applicant: QUALCOMM INCORPORATED

Inventor： Victor Van Der Veen ,  Pankaj Deshmukh ,  Behnam Dashtipour ,  David Hartley ,  Mosaddiq Saifuddin

IPC: G11C7/00 ,  G11C11/406 ,  G11C11/4096

CPC classification number: G11C11/40618 ,  G11C11/40615 ,  G11C11/4096

Abstract: An effect known as “rowhammer” may be mitigated in a DRAM organized in sub-banks of two or more rows. Row activation commands directed to a sub-bank may be detected. The number of row activation commands occurring within a refresh window may be counted and compared with a threshold. When it is detected that the number of row activation commands within the refresh window exceeds the threshold, an additional refresh command may be provided to the DRAM.

公开(公告)号：US20240062800A1

公开(公告)日：2024-02-22

申请号：US17890022

申请日：2022-08-17

Applicant: QUALCOMM Incorporated

Inventor： Victor Van Der Veen ,  Pankaj Deshmukh ,  Behnam Dashtipour ,  David Hartley ,  Mosaddiq Saifuddin

IPC: G11C11/406 ,  G11C11/4096

CPC classification number: G11C11/40618 ,  G11C11/40615 ,  G11C11/4096

Abstract: An effect known as “rowhammer” may be mitigated in a DRAM organized in sub-banks of two or more rows. Row activation commands directed to a sub-bank may be detected. The number of row activation commands occurring within a refresh window may be counted and compared with a threshold. When it is detected that the number of row activation commands within the refresh window exceeds the threshold, an additional refresh command may be provided to the DRAM.