SILICON-BASED SPIN-QUBIT QUANTUM MAGNETOMETER AND RADAR SYSTEM WITH ALL ELECTRICAL CONTROL

    公开(公告)号:US20220190174A1

    公开(公告)日:2022-06-16

    申请号:US17167318

    申请日:2021-02-04

    Inventor: Pierre Gandolfo

    Abstract: The present invention relates to a spin-qubit quantum magnetometer anti radar system entirely implemented in silicon and with full electrical control. By default, each detection clement of the silicon-based spin-qubit quantum magnetometer and radar system of the invention is built around a Field Effect Transistor (PET) on silicon over insulator with a back-gate as well as two front gates, which can be adjacent to one another along the Drain-Source FET channel or alternatively placed across that same channel and facing each other as corner gates. The silicon-based spin-qubit quantum magnetometer and radar system of the invention is particularly well-suited for any type of extremely-sensitive radar applications but but can also be applied for mineral/mining prospecting, discovery of distant astronomical objects, mine and metal detectors, tomography/MRI (Magnetic Resonance Imaging).

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