Invention Grant
- Patent Title: Silicon-based spin-qubit quantum magnetometer and radar system with all electrical control
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Application No.: US17167318Application Date: 2021-02-04
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Publication No.: US11894475B2Publication Date: 2024-02-06
- Inventor: Pierre Gandolfo
- Applicant: Pierre Gandolfo
- Applicant Address: FR Le Cannet
- Assignee: Pierre Gandolfo
- Current Assignee: Pierre Gandolfo
- Current Assignee Address: FR Le Cannet
- Main IPC: G01R33/06
- IPC: G01R33/06 ; H01L31/0352 ; G01S13/02 ; G06N10/00 ; G01S7/03

Abstract:
Embodiments of the present disclosure provide a spin-qubit quantum magnetometer and radar apparatus, entirely implemented in silicon and with full electrical control. By default, each detection element of the silicon-based spin-qubit quantum magnetometer and radar apparatus with full electrical control of the invention is built around a Field Effect Transistor (FET) on silicon over insulator with a back-gate as well as two front gates, which can be adjacent to one another along the Drain-Source FET channel or alternatively placed across that same channel and facing each other as corner gates.
Public/Granted literature
- US20220190174A1 SILICON-BASED SPIN-QUBIT QUANTUM MAGNETOMETER AND RADAR SYSTEM WITH ALL ELECTRICAL CONTROL Public/Granted day:2022-06-16
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