公开(公告)号：US20220385196A1

公开(公告)日：2022-12-01

申请号：US17755574

申请日：2021-01-05

Applicant: Panasonic Intellectual property Management Co., Ltd.

Inventor： RYUSUKE KANOMATA ,  YUSUKE KINOSHITA ,  HIDETOSHI ISHIDA

IPC: H02M3/335 ,  H02M1/00

Abstract: A substrate electric potential stabilization circuit is configured to be connected to a bidirectional switch element including a first main electrode, a second main electrode, and a backside electrode. The stabilization circuit includes a first switch connected to the first main electrode and the backside electrode in series between the first main electrode and the backside electrode, a second switch connected to the second main electrode and the backside electrode in series between the second main electrode and the backside electrode, and a through-current prevention circuit configured to prevent the first switch and the second switch from being turned on simultaneously. The substrate electric potential stabilization circuit prevents a through-current flowing in this circuit.

公开(公告)号：US20230082396A1

公开(公告)日：2023-03-16

申请号：US17904384

申请日：2021-02-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUSUKE KINOSHITA ,  HIDETOSHI ISHIDA

IPC: H03K17/082

Abstract: Provided are a determination device and a switch system capable of suppressing a power loss of a semiconductor switch. Determination device is used for semiconductor switch. Semiconductor switch includes junction field-effect transistor having gate and source corresponding to gate. Determination device includes resistor and determination circuit. Resistor has a first end and a second end. The first end of resistor is connected to gate. Determination circuit determines that overcurrent is flowing through semiconductor switch when there is a predetermined change in gate-source voltage of junction field-effect transistor in a range smaller than gate drive voltage provided between the second end of resistor and source.