CAPACITOR AND METHOD FOR PRODUCING SAME
    1.
    发明公开

    公开(公告)号:US20230178627A1

    公开(公告)日:2023-06-08

    申请号:US17911077

    申请日:2021-01-22

    CPC classification number: H01L29/66181 H01L29/945 H01L29/0665

    Abstract: A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate includes a porous part provided in a thickness direction in the capacitance generation region. The conductor layer includes a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of the porous part. The dielectric layer is provided between an inner surface of the porous part and the filling part. The porous part includes a macroporous part having macro pores and a nanoporous part formed in at least part of inner surfaces of the macro pores and having nano pores smaller than the macro pores.

    INFRARED SENSOR CHIP, AND INFRARED SENSOR EMPLOYING SAME

    公开(公告)号:US20190383666A1

    公开(公告)日:2019-12-19

    申请号:US16486473

    申请日:2018-02-15

    Abstract: The disclosure has a configuration including: a supporting substrate having a cavity; at least one bridge section extending directly above the cavity and having at least one end supported by the supporting substrate and an other end; and a thermopile wiring formed in the bridge section and including hot junctions in the bridge section and cold junctions directly above the supporting substrate, the hot junctions being connected to the cold junctions. The bridge section is provided with: at least one breakage detection wiring for detecting breakage of the bridge section; and at least one heater wiring. The breakage detection wiring is wired along the thermopile wiring. The heater wiring is wired such that part of the heater wiring is in an area between the other end of the bridge section and the hot junctions.

    CAPACITOR
    3.
    发明公开
    CAPACITOR 审中-公开

    公开(公告)号:US20240203654A1

    公开(公告)日:2024-06-20

    申请号:US18555475

    申请日:2022-03-22

    CPC classification number: H01G4/228 H01G4/33

    Abstract: A capacitor includes a silicon substrate, a first terminal, a dielectric layer, a conductive portion, and a second terminal. The silicon substrate has a principal surface and a porous part. The principal surface includes an opening region and a non-opening region other than the opening region. The porous part has an opening in the opening region. The first terminal is electrically connected to the silicon substrate. The dielectric layer is formed on an inner surface of the porous part. The conductive portion is filled, on the dielectric layer, in the porous part. The second terminal is electrically connected to the conductive portion. At least one of the first terminal or the second terminal overlaps at least part of the porous part in the normal direction of the principal surface.

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