公开(公告)号：US20190148916A1

公开(公告)日：2019-05-16

申请号：US16228683

申请日：2018-12-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tougo NAKATANI ,  Takahiro OKAGUCHI ,  Norio IKEDO ,  Takeshi YOKOYAMA ,  Tomohito YABUSHITA ,  Toru TAKAYAMA ,  Shoichi TAKASUKA

IPC: H01S5/343 ,  H01S5/026

Abstract: A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2 N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.