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公开(公告)号：US20210079546A1
公开(公告)日：2021-03-18
申请号：US17108008
申请日：2020-12-01
Inventor： HIDENOBU WAKITA , TOMOYA KAMATA , OSAMU SAKAI , KUNIHIRO UKAI , YUKIMUNE KANI , KEIICHI YAMAMOTO , MISA YOROZUYA
Abstract: A hydrogen system includes: a compressor in which protons extracted from an anode fluid supplied to an anode move to a cathode through an electrolyte membrane and compressed hydrogen is generated; and a first eliminator including: a water-permeable membrane; a cathode gas flow path through which a cathode gas discharged from the cathode of the compressor flows, the cathode gas flow path being provided on one main surface of the water-permeable membrane; and an accommodation portion provided on the other main surface of the water-permeable membrane and filled with a liquid at a pressure lower than that of the cathode gas. The first eliminator removes moisture contained in the cathode gas.
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公开(公告)号：US20250075344A1
公开(公告)日：2025-03-06
申请号：US18953622
申请日：2024-11-20
Inventor： MISA YOROZUYA , TAKAYUKI NAKAUE , OSAMU SAKAI , YUKIMUNE KANI
IPC: C25B9/05 , C25B1/04 , C25B11/032 , C25B15/023
Abstract: A compression apparatus according to an aspect of the present disclosure includes: a compressor that generates compressed hydrogen at a cathode by an electrolysis of water or by oxidation and reduction of hydrogen generated by applying a voltage between an anode and the cathode having flexural rigidity lower than flexural rigidity of the anode; and a controller that, in startup or in shutdown, determines an abnormality based on a gas flow rate at an exit of the anode or a pressure at the cathode after supplying a testing gas from a testing gas supplier to the cathode.
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公开(公告)号：US20200150014A1
公开(公告)日：2020-05-14
申请号：US16747263
申请日：2020-01-20
Inventor： MISA YOROZUYA , KEIICHI YAMAMOTO
IPC: G01N13/00 , G06F30/20 , G06F17/11 , G06F111/10 , G06F113/08
Abstract: A gas diffusion simulation method for simulating diffusion of a gas in a porous material having many pores, the method includes: calculating, in the pores, a Knudsen diffusion coefficient based on the mean square displacement of first gas particles in spaces surrounded by wall surfaces and a Knudsen diffusion term using the Knudsen diffusion coefficient, calculating an interdiffusion term using an interdiffusion coefficient between the first gas particles and second gas particles different therefrom, and performing simulation of the gas diffusion of the first gas particles by using a diffusion equation of the first gas particles represented by the sum of the Knudsen diffusion term and the interdiffusion term.
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4.发明申请公开(公告)号：US20190040536A1
公开(公告)日：2019-02-07
申请号：US16044416
申请日：2018-07-24
Inventor： HIDEAKI MURASE , MISA YOROZUYA
Abstract: The method for manufacturing a photosemiconductor according to the present disclosure includes treating a metal base material containing at least one kind of transition metal with a plasma under a pressure lower than atmospheric pressure and at a temperature lower than a volatilization temperature of the transition metal under an atmosphere at the pressure to provide the photosemiconductor containing the transition metal and a nitrogen element from at least a part of the metal base material. Here, the plasma is generated by applying a high-frequency voltage at a frequency in a range of not less than 30 MHz and not more than 300 MHz to a gas between a first electrode and a second electrode, and the gas is any one of: (i) a nitrogen gas; (ii) a gaseous mixture consisting of a nitrogen gas and an oxygen gas; (iii) a gaseous mixture consisting of a nitrogen gas and a rare gas; and (iv) a gaseous mixture consisting of a nitrogen gas, an oxygen gas, and a rare gas.
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