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公开(公告)号:US20220166438A1
公开(公告)日:2022-05-26
申请号:US17533031
申请日:2021-11-22
Inventor: Hyun Sang HWANG , Myoung Hoon KWAK
Abstract: There is provided an analog-stochastic converter for converting an analog voltage signal into a pulse signal having a corresponding probability. The analog-stochastic converter is implemented using a threshold switching element and a simple logic circuit, thereby reducing a size of the analog-stochastic converter and enabling a low power operation thereof. In addition, in order to update a weight, instead of an analog signal, a probability signal is applied using the above-described analog-stochastic converter, thereby updating a weight in a fully-parallel manner in a synaptic element array having an intersection structure. Accordingly, it is possible to shorten a time for weight update.
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公开(公告)号:US20230061770A1
公开(公告)日:2023-03-02
申请号:US17833691
申请日:2022-06-06
Inventor: Banerjee WRTIAM , Hyun Sang HWANG , Seung Woo LEE
IPC: H01L45/00
Abstract: A two-terminal atom-based switching device having a fast operating speed and high durability and a manufacturing method thereof are disclosed. It is possible to reduce a forming voltage during positive voltage forming by forming an oxygen vacancy percolation path through negative voltage forming, which is first forming, and forming high binding energy and low formation energy between oxygen vacancies and metal ions implanted through positive voltage forming which is second forming after the negative voltage forming. Further, since a significant amount of metal ions implanted into the insulating layer through negative voltage application switching after the positive voltage forming is removed, the volatility of the two-terminal atom-based switching device may be improved, and a stuck-on failure phenomenon in the durability may be prevented.
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公开(公告)号:US20220366227A1
公开(公告)日:2022-11-17
申请号:US17584302
申请日:2022-01-25
Inventor: Chul Jun LEE , Hyun Sang HWANG
IPC: G06N3/063
Abstract: Disclosed are a neuromorphic device and a unit synapse devices forming the same. The unit synapse device has a learning device and an inference device. The learning device and the inference device may share a via oxide layer and a common electrode, and a learning operation and an inference operation may be performed in one unit synapse device.
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