公开(公告)号：US20230061770A1

公开(公告)日：2023-03-02

申请号：US17833691

申请日：2022-06-06

Applicant: POSTECH Research and Business Development Foundation

Inventor： Banerjee WRTIAM ,  Hyun Sang HWANG ,  Seung Woo LEE

IPC: H01L45/00

Abstract: A two-terminal atom-based switching device having a fast operating speed and high durability and a manufacturing method thereof are disclosed. It is possible to reduce a forming voltage during positive voltage forming by forming an oxygen vacancy percolation path through negative voltage forming, which is first forming, and forming high binding energy and low formation energy between oxygen vacancies and metal ions implanted through positive voltage forming which is second forming after the negative voltage forming. Further, since a significant amount of metal ions implanted into the insulating layer through negative voltage application switching after the positive voltage forming is removed, the volatility of the two-terminal atom-based switching device may be improved, and a stuck-on failure phenomenon in the durability may be prevented.