公开(公告)号：US20240414930A1

公开(公告)日：2024-12-12

申请号：US18731817

申请日：2024-06-03

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Dae Sung CHUNG ,  Sangjun LEE

IPC: H10K39/32 ,  H10K71/12 ,  H10K85/10 ,  H10K85/60

Abstract: Provided is an organic photodiode for detecting SWIR, a method for manufacturing the same, and an SWIR sensor including the same, and more specifically, to an organic photodiode for SWIR detection including a first electrode, a second electrode, and a photoelectric conversion layer between the first and second electrodes. The photoelectric conversion layer includes a first photoelectric conversion layer and a second photoelectric conversion layer sequentially stacked, wherein the first photoelectric conversion layer includes a polymer represented by Formula 1, and an organic dopant represented by Formula 2.

公开(公告)号：US20240349573A1

公开(公告)日：2024-10-17

申请号：US18636536

申请日：2024-04-16

Applicant: Samsung Display Co., Ltd. ,  Postech Research and Business Development Foundation

Inventor： KUNWOOK CHO ,  Kyu Min SIM ,  Dae Sung CHUNG ,  SEOKGYU YOON

IPC: H10K59/65 ,  H10K59/122 ,  H10K59/40 ,  H10K85/60 ,  H10K101/30

CPC classification number: H10K59/65 ,  H10K59/122 ,  H10K59/40 ,  H10K85/615 ,  H10K85/654 ,  H10K85/6572 ,  H10K85/6574 ,  H10K2101/30

Abstract: Embodiments provide an electronic device that includes a display element layer disposed on a base layer and including at least one light sensing element. The light sensing element includes a first electrode, a hole transport region disposed on the first electrode, a photoelectric conversion layer disposed on the hole transport region, an electron transport region disposed on the photoelectric conversion layer, and a second electrode disposed on the electron transport region, wherein the second electrode comprises a metal and an organic compound, and a doping concentration of the organic compound is in a range of about 0.5% to about 10%.

公开(公告)号：US20220131084A1

公开(公告)日：2022-04-28

申请号：US17237453

申请日：2021-04-22

Applicant: POSTECH Research and Business Development Foundation

Inventor： Dae Sung CHUNG ,  Ju Hee KIM

IPC: H01L51/00 ,  C07D333/24

Abstract: Provided is a photosensitive material and a photodetector including the same. According to the present invention, the photodetector may include a photoactive layer having a photocurrent density of at most about 10−6 A/cm2 under a first incidence condition, and having a photocurrent density of at least about 10−4 A/cm2 under a second incidence condition. The wavelength of light under the second incidence condition is the same as the wavelength of light under the first incidence condition, and the intensity of light under the second incidence condition may be greater than the intensity of light under the first incidence condition.