公开(公告)号：US20240414930A1

公开(公告)日：2024-12-12

申请号：US18731817

申请日：2024-06-03

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Dae Sung CHUNG ,  Sangjun LEE

IPC: H10K39/32 ,  H10K71/12 ,  H10K85/10 ,  H10K85/60

Abstract: Provided is an organic photodiode for detecting SWIR, a method for manufacturing the same, and an SWIR sensor including the same, and more specifically, to an organic photodiode for SWIR detection including a first electrode, a second electrode, and a photoelectric conversion layer between the first and second electrodes. The photoelectric conversion layer includes a first photoelectric conversion layer and a second photoelectric conversion layer sequentially stacked, wherein the first photoelectric conversion layer includes a polymer represented by Formula 1, and an organic dopant represented by Formula 2.