公开(公告)号：US20240349623A1

公开(公告)日：2024-10-17

申请号：US18633006

申请日：2024-04-11

Applicant: Samsung Electronics Co., Ltd. ,  POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Won Joon CHO ,  Daesu LEE ,  Yongjoo JO

IPC: H10N50/85 ,  H10B61/00

CPC classification number: H10N50/85 ,  H10B61/00

Abstract: A spin orbit torque (spin orbit torque, SOT) material may include a substrate and an epitaxial thin film including a plurality of sub-stacks on the substrate, a manufacturing method of the SOT material, and a magnetic memory device including the SOT material are provided.

公开(公告)号：US20240417273A1

公开(公告)日：2024-12-19

申请号：US18679584

申请日：2024-05-31

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Daesu LEE ,  Sanghyeon KIM

IPC: C01G23/00 ,  C30B23/06 ,  C30B29/32

Abstract: A perovskite oxide thin film comprising a compound represented by Chemical Formula 1, and has a layered perovskite structure, wherein a ratio of A′ atoms to all A-sites in one A-site (A+A′) atomic layer is different from that of three or more other A-site atomic layers in a thickness direction.