公开(公告)号：US20250078897A1

公开(公告)日：2025-03-06

申请号：US18481998

申请日：2023-10-05

Applicant: PHISON ELECTRONICS CORP.

Inventor： Shih-Jia Zeng ,  Chen Yang Tang ,  Hsuan Ming Kuo ,  Shi-Chieh Hsu ,  Wei Lin

IPC: G11C11/406 ,  G11C29/52

Abstract: A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: detecting a status of a rewritable non-volatile memory module; and determining whether to perform a data refresh operation on the rewritable non-volatile memory module according to a first condition and a second condition. The first condition is related to a first physical unit in the rewritable non-volatile memory module. The second condition is related to a plurality of second physical units in the rewritable non-volatile memory module. The data refresh operation is configured to update data in the rewritable non-volatile memory module to reduce a bit error rate of the data.