公开(公告)号：US20240130248A1

公开(公告)日：2024-04-18

申请号：US18258174

申请日：2021-12-17

申请人： Paragraf Limited

发明人： Hugh Glass ,  Phillip David Biddulph ,  Rosie Baines ,  Lok Yi Lee

IPC分类号： H10N52/00 ,  G01R33/00 ,  G01R33/07 ,  H10N52/01 ,  H10N52/80

CPC分类号： H10N52/101 ,  G01R33/0094 ,  G01R33/072 ,  H10N52/01 ,  H10N52/80

摘要： A graphene Hall sensor for operation at cryogenic temperatures is provided. The graphene Hall sensor comprises a substrate, a graphene sheet, a dielectric layer, a first pair of electrical contacts, and a second pair of electrical contacts. The graphene sheet is provided on the substrate. The dielectric layer is provided on the graphene sheet. The graphene sheet and the dielectric layer share a continuous outer edge surface. The first pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a first direction. The second pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a second direction. The first direction is perpendicular to the second direction, wherein a path along the first direction between the first pair of electrical contacts crosses a path along the second direction between the second pair of electrical contacts. The graphene sheet has a sheet carrier density in the range of 2×1011 cm−2 to 1×1013 cm−2.

公开(公告)号：US12084758B2

公开(公告)日：2024-09-10

申请号：US17625016

申请日：2020-07-07

申请人： PARAGRAF LIMITED

发明人： Hugh Glass ,  Ivor Guiney ,  Martin Tyler ,  Robert Wallis ,  Rosie Baines ,  Simon Thomas

IPC分类号： C01B32/186 ,  B23K26/402 ,  C23C16/26 ,  C23C16/46 ,  C23C16/56 ,  G01R33/00 ,  G01R33/07 ,  B23K101/40

CPC分类号： C23C16/26 ,  B23K26/402 ,  C23C16/46 ,  C23C16/56 ,  G01R33/0052 ,  G01R33/07 ,  B23K2101/40

摘要： The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, (iii) selectively laser ablating the graphene to expose one or more portions of the surface of the first layer of the substrate, and (iv) selectively laser ablating the surface of the first layer of the substrate to expose one or more portions of the second layer of the substrate, wherein the first layer is an electrically conductive layer and the second layer is an electrically insulative layer, or wherein the second layer is an electrically conductive layer and the first layer is an electrically insulative layer.