公开(公告)号：US12255127B2

公开(公告)日：2025-03-18

申请号：US17190261

申请日：2021-03-02

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hidekazu Nakamura ,  Manabu Yanagihara ,  Tomohiko Nakamura ,  Yusuke Katagiri ,  Katsumi Otani ,  Takeshi Kawabata

IPC: H01L23/495 ,  H01L21/52 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L25/07 ,  H01L25/18 ,  H01L29/20

Abstract: A semiconductor device that is a surface mount-type device includes a nitride semiconductor chip including a silicon substrate having a first thermal expansion coefficient and an InxGayAl1-x-yN layer in contact with a surface of the silicon substrate, where 0≤x≤1, 0≤y≤1, 0≤x+y≤1; and a die pad including Cu and having a second thermal expansion coefficient that is greater than the first thermal expansion coefficient. A thickness of the nitride semiconductor chip is at least 0.2 mm, length L of the nitride semiconductor chip is at least 3.12 mm, and thickness tm of the die pad and length L of the nitride semiconductor chip satisfy tm≥2.00×10−3×L2+0.173, tm being a thickness in mm and L being a length in mm.

公开(公告)号：US11189549B2

公开(公告)日：2021-11-30

申请号：US16363828

申请日：2019-03-25

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hidekazu Nakamura ,  Manabu Yanagihara ,  Tomohiko Nakamura ,  Yusuke Katagiri ,  Katsumi Otani ,  Takeshi Kawabata

IPC: H01L23/495 ,  H01L29/20 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L21/52 ,  H01L23/48 ,  H01L23/31

Abstract: A semiconductor device that is a surface mount-type device includes a nitride semiconductor chip including a silicon substrate having a first thermal expansion coefficient and an InxGayAl1-x-yN layer in contact with a surface of the silicon substrate, where 0≤x≤1, 0≤y≤1, 0≤x+y≤1; and a die pad including Cu and having a second thermal expansion coefficient that is greater than the first thermal expansion coefficient. A thickness of the nitride semiconductor chip is at least 0.2 mm, length L of the nitride semiconductor chip is at least 3.12 mm, and thickness tm of the die pad and length L of the nitride semiconductor chip satisfy tm≥2.00×10−3×L2+0.173, tm being a thickness in mm and L being a length in mm.