公开(公告)号：US10700489B2

公开(公告)日：2020-06-30

申请号：US15935325

申请日：2018-03-26

申请人： Oclaro Japan, Inc.

发明人： Akira Nakanishi ,  Noriko Sasada ,  Takayuki Nakajima

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/022 ,  H01S5/22 ,  H05K1/18 ,  H05K1/14 ,  H04B10/40 ,  H01S5/343 ,  H01S5/028 ,  H01S5/02 ,  H01S5/20

摘要： Provided is an optical semiconductor device including a semiconductor substrate; a first semiconductor multilayer that is stacked on a first surface side of the semiconductor substrate, has a mesa structure extending along a light emitting direction, and emits light from an exit end surface; an electrode pad portion for wire bonding which is electrically connected to the upper surface of the mesa structure of the first semiconductor multilayer, is disposed on one side of the mesa structure, and is electrically connected to outside; and an electrode pad peripheral portion including a first rising surface which is in contact with the outer edge of the electrode pad portion on the exit end surface side and rises along the stacking direction from the electrode pad portion, in which a lower surface of the electrode pad portion is higher than the upper surface of the mesa structure of the first semiconductor multilayer.

公开(公告)号：US10236660B2

公开(公告)日：2019-03-19

申请号：US15926152

申请日：2018-03-20

申请人： Oclaro Japan, Inc.

发明人： Takayuki Nakajima ,  Kazuhiko Naoe

IPC分类号： H01S3/13 ,  H01S5/022 ,  H01S5/0687 ,  H01S5/06 ,  H01S5/0683 ,  H01S5/024 ,  H01S5/40

摘要： A submount which has a mounting surface on which three or more semiconductor lasers are arranged in a first direction, and includes a heat generator configured to increase the temperatures of the three or more semiconductor lasers, in which, where the heat generator generates heat, a first heat of the heat absorbed by a first semiconductor laser of the three or more semiconductor lasers disposed at one end along the first direction is larger than a second heat of the heat absorbed by a second semiconductor laser of the three or more semiconductor lasers disposed to be adjacent to the first semiconductor laser on the mounting surface.