公开(公告)号：US20090171493A1

公开(公告)日：2009-07-02

申请号：US11968140

申请日：2007-12-31

申请人： Nirmal Govind ,  Nital S. Patel ,  Nitin A Shah

发明人： Nirmal Govind ,  Nital S. Patel ,  Nitin A Shah

IPC分类号： G05B17/02

CPC分类号： G05B19/41865 ,  G05B17/02 ,  G05B2219/32247 ,  G05B2219/32291 ,  Y02P90/14 ,  Y02P90/20

摘要： Execution control systems for optimizing the efficiency of manufacturing processes are described in this application. For example, an execution management system may optimize IC processes and scheduling by analyzing a number of desired metrics along with system constraints, such as tool availability, tool reliability, etc, along with information from conventional processing tools such as APC and SPC. The optimized processing schedule may then be implemented in real-time and updated with new process requests and current information relating to tools and other metrics, thereby reducing human interaction and inefficiency. Other embodiments are also described in this application.

摘要翻译： 在本申请中描述了用于优化制造过程效率的执行控制系统。 例如，执行管理系统可以通过分析诸如工具可用性，工具可靠性等的系统约束以及诸如APC和SPC之类的常规处理工具的信息来分析多个期望度量来优化IC过程和调度。 然后可以实时地实现优化的处理计划，并用新的过程请求和与工具和其他度量相关的当前信息进行更新，从而减少人的交互和低效率。 在本申请中还描述了其它实施例。

公开(公告)号：US07517141B2

公开(公告)日：2009-04-14

申请号：US11828206

申请日：2007-07-25

申请人： Nital S. Patel ,  Amit M. Rajadhyaksha ,  James Boone

发明人： Nital S. Patel ,  Amit M. Rajadhyaksha ,  James Boone

IPC分类号： G01N25/00 ,  H01L21/02

CPC分类号： C23C16/52 ,  C23C16/345 ,  C23C16/481 ,  H01L21/67248

摘要： The present invention facilitates multi-zone furnace (102) based deposition processes by iteratively adjusting deposition time and zonal setpoint temperatures to mitigate deviations from desired target thickness(es). Coupled feedback loops are employed to update the deposition time (520) and the zonal setpoint temperatures (510) lot to lot and batch to batch while mitigating deviations fro the desired target thickness(es). Error checking is performed by computing an error metric (506) and only updating the setpoint temperatures on the error metric being within an acceptable value (508). Additionally, an excitation parameter (512) is determined that indicates variations in furnace operation.

摘要翻译： 本发明通过迭代地调整沉积时间和区域设定点温度以减轻与期望目标厚度的偏差来促进基于多区域炉（102）的沉积过程。 采用耦合的反馈环来更新沉积时间（520）和区域设定点温度（510）批次批次批次，同时减少所需目标厚度的偏差。 通过计算错误度量（506）并且仅将错误度量上的设定点温度更新在可接受的值（508）内来执行错误检查。 此外，确定表示炉操作变化的激励参数（512）。

公开(公告)号：US20090082893A1

公开(公告)日：2009-03-26

申请号：US11860515

申请日：2007-09-24

申请人： Nital S. Patel ,  Steven L. Carson

发明人： Nital S. Patel ,  Steven L. Carson

IPC分类号： G06F19/00

CPC分类号： G05B17/02

摘要： Methods for consistent updates to APC models with partitioning along multiple components are generally described. In one example, a method includes acquiring measurement data from one or more semiconductor wafers of a processed first lot, the data having a plurality of contexts, applying a model having parameters with partitioning along the contexts to the measurement data; and applying a constraint on a subset of the model parameters such that the subset remains centered around zero to provide consistent updates for automated process control of lots processed after the first lot.

摘要翻译： 一般来说，对沿着多个组件分区的APC模型进行一致更新的方法。 在一个示例中，一种方法包括从经处理的第一批次的一个或多个半导体晶片获取测量数据，该数据具有多个上下文，将具有沿上下文划分的参数的模型应用于测量数据; 以及对所述模型参数的子集应用约束，使得所述子集保持以零为中心，以为在第一批之后处理的批次的自动化过程控制提供一致的更新。

公开(公告)号：US20080147225A1

公开(公告)日：2008-06-19

申请号：US11642502

申请日：2006-12-19

申请人： Nital S. Patel

发明人： Nital S. Patel

IPC分类号： G06F17/00

CPC分类号： G05B19/41865 ,  G05B2219/31336 ,  G05B2219/32057 ,  Y02P90/20

摘要： In one embodiment, an apparatus and method for implementing intelligent and accurate updates to state-based advanced process control (APC) models are disclosed. In one embodiment, the method comprises receiving at least one of a re-measurement or a data invalidation at a state-based advanced process control (APC) model, referencing a state value table and a state update table to determine the current state of lot measurements in the state-based APC model, updating the state value table and the state update table to reflect the at least one of the re-measurement or the data invalidation, and determining settings to apply to a lot at a process tool based on process variability patterns established by the state-based APC model from the updated values in the state value table and the state update table.

摘要翻译： 在一个实施例中，公开了一种用于实现对基于状态的先进过程控制（APC）模型的智能和准确更新的装置和方法。 在一个实施例中，该方法包括在基于状态的高级处理控制（APC）模型中接收重新测量或数据无效中的至少一个，参考状态值表和状态更新表以确定批次的当前状态 基于状态的APC模型中的测量，更新状态值表和状态更新表以反映重新测量或数据无效中的至少一个，以及基于过程来确定在处理工具上应用于批次的设置 由国家的APC模型根据状态值表和状态更新表中的更新值建立的变异性模式。

公开(公告)号：US07424331B2

公开(公告)日：2008-09-09

申请号：US11642502

申请日：2006-12-19

申请人： Nital S. Patel

发明人： Nital S. Patel

IPC分类号： G05B13/02

CPC分类号： G05B19/41865 ,  G05B2219/31336 ,  G05B2219/32057 ,  Y02P90/20

摘要： In one embodiment, an apparatus and method for implementing intelligent and accurate updates to state-based advanced process control (APC) models are disclosed. In one embodiment, the method comprises receiving at least one of a re-measurement or a data invalidation at a state-based advanced process control (APC) model, referencing a state value table and a state update table to determine the current state of lot measurements in the state-based APC model, updating the state value table and the state update table to reflect the at least one of the re-measurement or the data invalidation, and determining settings to apply to a lot at a process tool based on process variability patterns established by the state-based APC model from the updated values in the state value table and the state update table.

公开(公告)号：US07761179B2

公开(公告)日：2010-07-20

申请号：US11860515

申请日：2007-09-24

申请人： Nital S. Patel ,  Steven L. Carson

发明人： Nital S. Patel ,  Steven L. Carson

IPC分类号： G06F19/00

CPC分类号： G05B17/02

摘要： Methods for consistent updates to APC models with partitioning along multiple components are generally described. In one example, a method includes acquiring measurement data from one or more semiconductor wafers of a processed first lot, the data having a plurality of contexts, applying a model having parameters with partitioning along the contexts to the measurement data; and applying a constraint on a subset of the model parameters such that the subset remains centered around zero to provide consistent updates for automated process control of lots processed after the first lot.

摘要翻译： 一般来说，对沿着多个组件分区的APC模型进行一致更新的方法。 在一个示例中，一种方法包括从经处理的第一批次的一个或多个半导体晶片获取测量数据，该数据具有多个上下文，将具有沿上下文划分的参数的模型应用于测量数据; 以及对所述模型参数的子集应用约束，使得所述子集保持以零为中心，以为在第一批之后处理的批次的自动化过程控制提供一致的更新。

公开(公告)号：US06941242B2

公开(公告)日：2005-09-06

申请号：US10676399

申请日：2003-10-01

申请人： Nital S. Patel ,  Rajesh Tiwari

发明人： Nital S. Patel ,  Rajesh Tiwari

IPC分类号： G06F17/18

CPC分类号： G06F17/18

摘要： The present invention defines a versatile system for analyzing accuracy of industrial measurement data. The system of the present invention compiles measurements of a primary device characteristic from a representative cross-section of a population of devices. The system provides a modeling function, from which is determined a variance for each measurement—forming a corresponding compilation of variances (200). The compilation of variances is evaluated for discontinuities (300), to identify a discontinuity within the compilation of variances. This discontinuity is utilized to determine a demarcation (302) between accurate and inaccurate measurement data.

摘要翻译： 本发明定义了用于分析工业测量数据的精度的通用系统。 本发明的系统从一组设备的代表性横截面编译主要设备特性的测量结果。 该系统提供建模功能，由此确定每个测量的方差 - 形成相应的方差汇编（200）。 对不连续性（300）评估方差的汇编，以确定方差汇编中的不连续性。 该不连续性用于确定准确和不精确的测量数据之间的分界（302）。

公开(公告)号：US06623333B1

公开(公告)日：2003-09-23

申请号：US09711004

申请日：2000-11-09

申请人： Nital S. Patel ,  Gregory A. Miller ,  Christopher D. Guinn ,  Adriana Sanchez

发明人： Nital S. Patel ,  Gregory A. Miller ,  Christopher D. Guinn ,  Adriana Sanchez

IPC分类号： B24B100

CPC分类号： H01L21/67276 ,  B24B37/005 ,  B24B37/042 ,  B24B49/03 ,  B24B51/00 ,  H01L21/67253

摘要： A method is provided for controlling a wafer polishing process. The method includes determining a polishing characteristic for a particular type of device from a set of measurements obtained from a wafer having a device of the particular type, and updating the polishing characteristic in response to polishing and measuring a wafer having a device of the particular type. The method further includes determining the polish rate of a polisher using a set of measurements obtained from a wafer polished on the polisher; and updating the polish rate of the polisher in response to polishing a wafer on the polisher and measuring the wafer. The method also includes determining a desired polishing time on the polisher for a wafer having a device of the particular type using the updated polishing characteristic of the device and the updated polish rate of the polisher.

摘要翻译： 提供了一种用于控制晶片抛光工艺的方法。 该方法包括从从具有特定类型的器件的晶片获得的一组测量结果中确定特定类型器件的抛光特性，以及响应于抛光和更新具有特定类型器件的晶片的更新抛光特性 。 该方法还包括使用从在抛光机上抛光的晶片获得的一组测量结果来确定抛光机的抛光速率; 以及响应抛光所述抛光机上的晶片并测量所述晶片，更新所述抛光机的抛光速率。 该方法还包括使用装置的更新的抛光特性和抛光机的更新的抛光速率来确定具有特定类型的装置的晶片在抛光机上的期望的抛光时间。

公开(公告)号：US20090005888A1

公开(公告)日：2009-01-01

申请号：US11824237

申请日：2007-06-29

申请人： Nital S. Patel ,  Xian Luo

发明人： Nital S. Patel ,  Xian Luo

IPC分类号： G05B13/02

CPC分类号： G05B19/41845 ,  G05B2219/32129 ,  G05B2219/32135 ,  G05B2219/32137 ,  G05B2219/32142 ,  G05B2219/45031 ,  Y02P90/16 ,  Y02P90/185

摘要： Systems and methods associated with configurable advanced process control (APC) application development are described. One embodiment includes a computing system that includes configuration files corresponding to APC clients. The computing system also includes computational models corresponding to the configuration files. The computing system also includes a Rapid Advanced Control Enabler (RACE). A RACE may select a configuration file to process based, at least in part, on a request received from an APC client. A RACE may also dynamically load a computational model that corresponds to the selected configuration file. A RACE may also execute the dynamically loaded computational model and provide a response to the APC client from which the request was received.

摘要翻译： 描述了与可配置的高级过程控制（APC）应用程序开发相关的系统和方法。 一个实施例包括包括对应于APC客户端的配置文件的计算系统。 计算系统还包括与配置文件相对应的计算模型。 计算系统还包括快速高级控制启动器（RACE）。 至少部分地，RACE可以基于从APC客户端接收到的请求来选择配置文件进行处理。 RACE还可以动态地加载与所选配置文件相对应的计算模型。 RACE还可以执行动态加载的计算模型，并向接收到请求的APC客户端提供响应。

公开(公告)号：US07010381B2

公开(公告)日：2006-03-07

申请号：US10654063

申请日：2003-09-03

申请人： Nital S. Patel ,  Rajesh Tiwari

发明人： Nital S. Patel ,  Rajesh Tiwari

IPC分类号： G06F19/00

CPC分类号： H01L21/67253 ,  H01L22/20

摘要： The present invention defines a system (200) for selectively controlling post-CMP dishing effects occurring in semiconductor wafers having copper metallization. The system has a CMP system (202) that performs copper overpolish and barrier polish on a copper-based semiconductor wafer (206). A profilometer (204) measures actual dishing occurring in the copper metallization after polishing. An input data set (220) includes a dishing target for the semiconductor wafer. A data integrity function (212) evaluates the profilometer's measurement, and generates an indicator of the reliability of the measurement. A modeling function (214) receives the measurement, the indicator, and the dishing target, and evaluates any differential between the dishing target and actual dishing. The modeling function generates a processing target to eliminate the differential, and modifies this process responsive to the indicator. A processing control function (210) receives the processing target, and alters the copper overpolish or barrier polish responsive to the processing target.

摘要翻译： 本发明限定了用于选择性地控制在具有铜金属化的半导体晶片中发生的CMP后凹陷效应的系统（200）。 该系统具有在铜基半导体晶片（206）上执行铜过度抛光和阻挡抛光的CMP系统（202）。 轮廓仪（204）测量抛光后铜金属化中发生的实际凹陷。 输入数据组（220）包括用于半导体晶片的凹陷目标。 数据完整性功能（212）评估轮廓仪的测量，并产生测量可靠性的指标。 建模功能（214）接收测量值，指标值和凹陷目标值，并评估凹陷目标与实际凹陷之间的差值。 建模函数产生一个处理目标，以消除微分，并根据指标修改此过程。 处理控制功能（210）接收处理目标，并响应于处理目标改变铜过度抛光或阻挡抛光。